Markus Pessa
Overview
Explore the profile of Markus Pessa including associated specialties, affiliations and a list of published articles.
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Articles
7
Citations
12
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Recent Articles
1.
Viheriala J, Rytkonen T, Niemi T, Pessa M
Nanotechnology
. 2011 Jul;
19(1):015302.
PMID: 21730528
Nanoimprint lithography has the potential to cost efficiently realize patterns with extremely narrow linewidth over a large area. A significant challenge to achieving this target is the fabrication of nanoimprint...
2.
Kontio J, Husu H, Simonen J, Huttunen M, Tommila J, Pessa M, et al.
Opt Lett
. 2009 Jul;
34(13):1979-81.
PMID: 19571972
We show that nanoimprint lithography combined with electron-beam evaporation provides a cost-efficient, rapid, and reproducible method to fabricate conical nanostructures with very sharp tips on flat surfaces in high volumes....
3.
Leinonen T, Ranta S, Laakso A, Morozov Y, Saarinen M, Pessa M
Opt Express
. 2009 Jun;
15(20):13451-6.
PMID: 19550614
A high-power dual-wavelength AlGaInAs / GaAs laser operating in a vertical external-cavity surface emitting geometry, grown by molecular beam epitaxy, is reported. The active regions of the laser are separated...
4.
Harkonen A, Rautiainen J, Guina M, Konttinen J, Tuomisto P, Orsila L, et al.
Opt Express
. 2009 Jun;
15(6):3224-9.
PMID: 19532562
We report on an optically-pumped intracavity frequency doubled GaInNAs/GaAs -based semiconductor disk laser emitting around 615 nm. The laser operates at fundamental wavelength of 1230 nm and incorporates a BBO...
5.
Hastie J, Morton L, Calvez S, Dawson M, Leinonen T, Pessa M, et al.
Opt Express
. 2009 Jun;
13(18):7209-14.
PMID: 19498743
We report an InGaP/AlInGaP/GaAs microchip vertical-external-cavity surface emitting laser operating directly at red wavelengths and demonstrate its potential for array-format operation. Optical pumping with up to 3.3W at 532nm produced...
6.
Hastie J, Calvez S, Dawson M, Leinonen T, Laakso A, Lyytikainen J, et al.
Opt Express
. 2009 Jun;
13(1):77-81.
PMID: 19488329
High-power, continuous-wave operation at red wavelengths has been achieved with a vertical external cavity surface emitting laser based on the GaInP/AlGaInP/GaAs material system. Output power of 0.4W was obtained in...
7.
Nowak R, Chrobak D, Nagao S, Vodnick D, Berg M, Tukiainen A, et al.
Nat Nanotechnol
. 2009 May;
4(5):287-91.
PMID: 19421212
The increase in semiconductor conductivity that occurs when a hard indenter is pressed into its surface has been recognized for years, and nanoindentation experiments have provided numerous insights into the...