Kuan-Wei Lee
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Explore the profile of Kuan-Wei Lee including associated specialties, affiliations and a list of published articles.
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20
Citations
126
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Recent Articles
1.
Chen K, Yang C, Shu S, Lo Y, Lee K, Wang L, et al.
Sci Adv
. 2024 Nov;
10(45):eadq0660.
PMID: 39504361
RIG-I-like receptors (RLRs) are cytosolic RNA sensors critical for antiviral immunity. RLR activation is regulated by polyubiquitination and oligomerization following RNA binding. Yet, little is known about how RLRs exploit...
2.
Mazumder S, Pal P, Lee K, Wang Y
Materials (Basel)
. 2022 Dec;
15(24).
PMID: 36556876
We demonstrated the performance of an Al2O3/SiO2 stack layer AlGaN/GaN metal−oxide semiconductor (MOS) high-electron-mobility transistor (HEMT) combined with a dual surface treatment that used tetramethylammonium hydroxide (TMAH) and hydrochloric acid...
3.
Huang C, Mazumder S, Lin P, Lee K, Wang Y
Materials (Basel)
. 2022 Oct;
15(19).
PMID: 36234237
A metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed based on using a AlO/ZrO stacked layer on conventional AlGaN/GaN HEMT to suppress the gate leakage current, decrease flicker noise, increase high-frequency performance,...
4.
Huang P, Wang C, Lien S, Lee K, Wang N, Huang C
Molecules
. 2021 Jun;
26(9).
PMID: 34063657
In this study, we describe composited perovskite films based on the doping of lead cesium triiodide (CsPbI) quantum dots (QDs) into methylammonium lead iodide (MAPbI). CsPbI QDs and MAPbI were...
5.
Chen Y, Lin H, Lee K, Wang Y
Materials (Basel)
. 2021 Mar;
14(4).
PMID: 33670823
An inverted-type InAlAs/InAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with liquid phase oxidized (LPO) InAlAs as the gate insulator is demonstrated. A thin InAs layer is inserted in the sub-channel layers of...
6.
Hsieh Y, Hsu B, Peng K, Lee K, Chu C, Chang S, et al.
ACS Nano
. 2020 Jul;
14(9):11670-11676.
PMID: 32701270
Lead halide perovskite materials have recently received considerable attention for achieving an economic and tunable laser owing to their solution-processable feature and promising optical properties. However, most reported perovskite-based lasers...
7.
Chen C, Lee K, Lin C, Juang T
Polymers (Basel)
. 2019 Apr;
10(4).
PMID: 30966446
Poly(2,6-dimethyl phenyl oxide) (PPO) is known for its low dissipation factor. To achieve insulating materials with low dissipation factors for high-frequency communication applications, a telechelic oligomer-type benzoxazine (P-APPO) and a...
8.
Chen C, Lee K, Lin C, Ho M, Hsu M, Hsiang S, et al.
Polymers (Basel)
. 2019 Apr;
10(1).
PMID: 30966063
Three methacrylate-containing polyimides (Px⁻MMA; x = 1⁻3) were prepared from the esterification of hydroxyl-containing polyimides (Px⁻OH; x = 1⁻3) with methacrylic anhydride. Px⁻MMA exhibits active ester linkages (Ph⁻O⁻C(=O)⁻) that can...
9.
Thiyagarajan V, Lee K, Leong M, Weng C
J Biomol Struct Dyn
. 2017 Nov;
36(16):4220-4234.
PMID: 29183268
The mammalian target of rapamycin (mTOR), an atypical serine/threonine kinase, plays a central role in the regulation of cell proliferation, growth, differentiation, migration, and survival. In this study, the 3-D...
10.
Lam K, Huang J, Zou Y, Lee K, Wang Y
Materials (Basel)
. 2017 Aug;
9(11).
PMID: 28773982
This study presents the fabrication and improved properties of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium dioxide (LPD-TiO₂) as a gate dielectric. Sulfur pretreatment and...