Kosuke Nagashio
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Explore the profile of Kosuke Nagashio including associated specialties, affiliations and a list of published articles.
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Articles
26
Citations
152
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Recent Articles
1.
Kanahashi K, Tanaka I, Nishimura T, Aso K, Lu A, Morito S, et al.
ACS Nano
. 2025 Mar;
PMID: 40028998
Substitutional doping in transition-metal dichalcogenides (TMDCs) is a pivotal strategy for tuning their electronic and optical properties, enabling their integration into next-generation electronic and optoelectronic devices. This study examines the...
2.
Fukui T, Nishimura T, Miyata Y, Ueno K, Taniguchi T, Watanabe K, et al.
ACS Appl Mater Interfaces
. 2024 Feb;
16(7):8993-9001.
PMID: 38324211
Two-dimensional (2D) materials stand as a promising platform for tunnel field-effect transistors (TFETs) in the pursuit of low-power electronics for the Internet of Things era. This promise arises from their...
3.
Kato R, Uchiyama H, Nishimura T, Ueno K, Taniguchi T, Watanabe K, et al.
ACS Appl Mater Interfaces
. 2023 May;
15(22):26977-26984.
PMID: 37222246
For the complementary operation of two-dimensional (2D) material-based field-effect transistors (FETs), high-performance p-type FETs are essential. In this study, we applied surface charge-transfer doping from WO, which has a large...
4.
Chang Y, Nanae R, Kitamura S, Nishimura T, Wang H, Xiang Y, et al.
Adv Mater
. 2023 May;
35(29):e2301172.
PMID: 37148528
The shift-current photovoltaics of group-IV monochalcogenides has been predicted to be comparable to those of state-of-the-art Si-based solar cells. However, its exploration has been prevented from the centrosymmetric layer stacking...
5.
Ogura H, Kawasaki S, Liu Z, Endo T, Maruyama M, Gao Y, et al.
ACS Nano
. 2023 Feb;
17(7):6545-6554.
PMID: 36847351
In-plane heterostructures of transition metal dichalcogenides (TMDCs) have attracted much attention for high-performance electronic and optoelectronic devices. To date, mainly monolayer-based in-plane heterostructures have been prepared by chemical vapor deposition...
6.
Li S, Nishimura T, Maruyama M, Okada S, Nagashio K
Nanoscale Adv
. 2023 Feb;
5(2):405-411.
PMID: 36756254
The defect-free surface of MoS is of high importance for applications in electronic devices. Theoretical calculations have predicted that oxidative etching could be responsible for sulfur vacancy formation. No direct...
7.
Uchiyama H, Maruyama K, Chen E, Nishimura T, Nagashio K
Small
. 2023 Jan;
19(15):e2207394.
PMID: 36631287
Achieving the direct growth of an ultrathin gate insulator with high uniformity and high quality on monolayer transition metal dichalcogenides (TMDCs) remains a challenge due to the chemically inert surface...
8.
Ngamprapawat S, Nishimura T, Watanabe K, Taniguchi T, Nagashio K
ACS Appl Mater Interfaces
. 2022 May;
14(22):25731-25740.
PMID: 35623013
The difficulty of current injection into single-crystalline hexagonal boron nitride (-BN) has long hindered the realization of -BN-based high-performance electronic and optoelectronic devices. Here, with the contact formed by Ar...
9.
Sasaki T, Ueno K, Taniguchi T, Watanabe K, Nishimura T, Nagashio K
ACS Appl Mater Interfaces
. 2022 May;
14(22):25659-25669.
PMID: 35604943
Recently, the ultrafast operation (∼20 ns) of a two-dimensional (2D) heterostructured nonvolatile memory (NVM) device was demonstrated, attracting considerable attention. However, there is no consensus on its physical origin. In...
10.
Ago H, Okada S, Miyata Y, Matsuda K, Koshino M, Ueno K, et al.
Sci Technol Adv Mater
. 2022 May;
23(1):275-299.
PMID: 35557511
The past decades of materials science discoveries are the basis of our present society - from the foundation of semiconductor devices to the recent development of internet of things (IoT)...