Junhee Jung
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Explore the profile of Junhee Jung including associated specialties, affiliations and a list of published articles.
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13
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Recent Articles
1.
Park H, Kim D, Jung J, Pham D, Le A, Cho J, et al.
Heliyon
. 2018 Nov;
4(10):e00835.
PMID: 30465027
A hemisphere-array textured glass substrate was fabricated for the development of an improved thin-film (TF) silicon solar cell. The HF-HSO-etchant system influenced the light path owing to the formation of...
2.
Kim J, Jang K, Phu N, Trinh T, Raja J, Kim T, et al.
J Nanosci Nanotechnol
. 2016 Aug;
16(5):4984-8.
PMID: 27483856
Nonvolatile memory (NVM) with silicon dioxide/silicon nitride/silicon oxynitride (ONO(n)) charge trap structure is a promising flash memory technology duo that will fulfill process compatibility for system-on-panel displays, down-scaling cell size...
3.
Park H, Nam S, Shin M, Ju M, Lee Y, Yu J, et al.
J Nanosci Nanotechnol
. 2016 Aug;
16(5):4886-92.
PMID: 27483840
We developed a technique for forming textured aluminum-doped zinc oxide (ZnO:Al) transparent conductive oxide (TCO) films on glass substrates, which were etched using a mixture of hydrofluoric (HF) and hydrochloric...
4.
Cho J, Iftiquar S, Kim M, Park J, Jung J, Kim J, et al.
J Nanosci Nanotechnol
. 2016 Aug;
16(5):4870-4.
PMID: 27483837
Intrinsic hydrogenated amorphous silicon-germanium (a-SiGe:H) alloy is generally used in the bottom cell because of its low band gap. The a-SiGe:H has a higher photo conductivity in comparison to the...
5.
Jung J, Kim S, Park J, Shin C, Pham D, Kim J, et al.
J Nanosci Nanotechnol
. 2016 Jan;
15(10):7760-4.
PMID: 26726408
This article mainly discusses the difference between p-i-n and n-i-p type solar cells. Their structural difference has an effect on cell performance, such as open circuit voltage and fill factor....
6.
Kim S, Lee J, Dao V, Ahn S, Hussain S, Park J, et al.
J Nanosci Nanotechnol
. 2015 Sep;
15(3):2247-52.
PMID: 26413647
Transparent conductive oxides (TCOs) have been widely used as transparent electrodes for opto-electronic devices, such as solar cells, flat-panel displays, and light-emitting diodes, because of their unique characteristics of high...
7.
Park J, Shin C, Park H, Jung J, Lee Y, Bong S, et al.
J Nanosci Nanotechnol
. 2015 Sep;
15(3):2241-6.
PMID: 26413646
We investigated thin film silicon solar cells with boron doped hydrogenated nanocrystalline silicon/ hydrogenated amorphous silicon oxide [p-type nc-Si:H/a-SiOx:H] layer. First, we researched the bandgap engineering of diborane (B2H6) doped...
8.
Shin C, Park J, Kim S, Park H, Jung J, Bong S, et al.
J Nanosci Nanotechnol
. 2015 May;
14(12):9388-94.
PMID: 25971071
Highly conducting boron-doped microcrystalline silicon (p-type μc-Si:H) thin films have been prepared by radio frequency plasma-enhanced chemical-vapor deposition (RF-PECVD). In this work, the effects of hydrogen dilution, doping ratio, plasma...
9.
Shin C, Park J, Kim S, Jang J, Jung J, Lee Y, et al.
J Nanosci Nanotechnol
. 2015 May;
14(10):8110-6.
PMID: 25942934
Electrode distances and gas flow ratios are important parameters for fabricating intrinsic (i-type) layers of hydrogenated amorphous silicon (a-Si:H) films using a very high frequency plasma-enhanced chemical-vapor deposition (VHF-PECVD) system....
10.
Park H, Iftiquar S, Thuy T, Jang J, Ahn S, Kim S, et al.
J Nanosci Nanotechnol
. 2015 May;
14(10):7710-7.
PMID: 25942853
An aluminum doped zinc oxide (AZO) films for front contacts of thin film solar cells, in this work, were prepared by DC magnetron sputtering with different target angles. Effects of...