Joel Eymery
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Explore the profile of Joel Eymery including associated specialties, affiliations and a list of published articles.
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28
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144
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Recent Articles
11.
Li N, Labat S, Leake S, Dupraz M, Carnis J, Cornelius T, et al.
ACS Nano
. 2020 Aug;
14(8):10305-10312.
PMID: 32806035
Gallium nitride (GaN) is of technological importance for a wide variety of optoelectronic applications. Defects in GaN, like inversion domain boundaries (IDBs), significantly affect the electrical and optical properties of...
12.
Kapoor A, Finot S, Grenier V, Robin E, Bougerol C, Bleuse J, et al.
ACS Appl Mater Interfaces
. 2020 Mar;
12(16):19092-19101.
PMID: 32208628
Different types of buffer layers such as InGaN underlayer (UL) and InGaN/GaN superlattices are now well-known to significantly improve the efficiency of -plane InGaN/GaN-based light-emitting diodes (LEDs). The present work...
13.
El Kacimi A, Pauliac-Vaujour E, Dellea O, Eymery J
Nanomaterials (Basel)
. 2018 Jun;
8(6).
PMID: 29895755
We report an example of the realization of a flexible capacitive piezoelectric sensor based on the assembly of horizontal c¯-polar long Gallium nitride (GaN) wires grown by metal organic vapour...
14.
Richard M, Fernandez S, Eymery J, Hofmann J, Gao L, Carnis J, et al.
Nanoscale
. 2018 Feb;
10(10):4833-4840.
PMID: 29473085
The physical and chemical properties of nanostructures depend on their surface facets. Here, we exploit a pole figure approach to determine the three-dimensional orientation matrix of a nanostructure from a...
15.
El Kacimi A, Pauliac-Vaujour E, Eymery J
ACS Appl Mater Interfaces
. 2018 Jan;
10(5):4794-4800.
PMID: 29338171
We report a simple and scalable fabrication process of flexible capacitive piezoelectric sensors using vertically aligned gallium nitride (GaN) wires as well as their physical principles of operation. The as-grown...
16.
Durand C, Carlin J, Bougerol C, Gayral B, Salomon D, Barnes J, et al.
Nano Lett
. 2017 Apr;
17(6):3347-3355.
PMID: 28441498
Thin-wall tubes composed of nitride semiconductors (III-N compounds) based on GaN/InAlN multiple quantum wells (MQWs) are fabricated by metal-organic vapor-phase epitaxy in a simple and full III-N approach. The synthesis...
17.
Salomon D, Messanvi A, Eymery J, Martinez-Criado G
Nano Lett
. 2017 Jan;
17(2):946-952.
PMID: 28103050
Noncentrosymmetric one-dimensional structures are key driving forces behind advanced nanodevices. Owing to the critical role of silane injection in creating nanosized architectures, it has become a challenge to investigate the...
18.
Zhang H, Dai X, Guan N, Messanvi A, Neplokh V, Piazza V, et al.
ACS Appl Mater Interfaces
. 2016 Sep;
8(39):26198-26206.
PMID: 27615556
A flexible nitride p-n photodiode is demonstrated. The device consists of a composite nanowire/polymer membrane transferred onto a flexible substrate. The active element for light sensing is a vertical array...
19.
Guan N, Dai X, Messanvi A, Zhang H, Yan J, Gautier E, et al.
ACS Photonics
. 2016 Jun;
3(4):597-603.
PMID: 27331079
We report the first demonstration of flexible white phosphor-converted light emitting diodes (LEDs) based on p-n junction core/shell nitride nanowires. GaN nanowires containing seven radial InGaN/GaN quantum wells were grown...
20.
Neplokh V, Messanvi A, Zhang H, Julien F, Babichev A, Eymery J, et al.
Nanoscale Res Lett
. 2015 Nov;
10(1):447.
PMID: 26577391
We report on the demonstration of substrate-free nanowire/polydimethylsiloxane (PDMS) membrane light-emitting diodes (LEDs). Metal-organic vapour-phase epitaxy (MOVPE)-grown InGaN/GaN core-shell nanowires were encapsulated into PDMS layer. After metal deposition to p-GaN,...