Hyeji Sim
Overview
Explore the profile of Hyeji Sim including associated specialties, affiliations and a list of published articles.
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Articles
9
Citations
17
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Recent Articles
1.
Yoon M, Park Y, Sim H, Kwon H, Lee Y, Jang H, et al.
Adv Mater
. 2025 Feb;
:e2413062.
PMID: 39935132
Light-driven energy conversion devices call for the atomic-level manipulation of defects associated with electronic states in solids. However, previous approaches to produce oxygen vacancy (V) as a source of sub-bandgap...
2.
Park Y, Sim H, Lee S, Park W, Hwang J, Hur P, et al.
Adv Mater
. 2024 Nov;
37(4):e2413546.
PMID: 39604314
The coupled electronic and structural transitions in metal-insulator transition (MIT) hinder ultrafast switching and ultimate endurance. Decoupling these transitions and achieving a zero-strain electronic MIT can overcome the fundamental limitations...
3.
Sim H, Doh K, Park Y, Song K, Kim G, Son J, et al.
Small
. 2024 Jul;
20(43):e2402260.
PMID: 38982949
The metal-insulator (MI) transition of vanadium dioxide (VO) is effectively modulated by oxygen vacancies, which decrease the transition temperature and insulating resistance. Oxygen vacancies in thin films can be driven...
4.
Lee Y, Yoon D, Nam Y, Yu S, Lim C, Sim H, et al.
Mater Horiz
. 2024 Jun;
11(16):3835-3843.
PMID: 38835315
The octahedral symmetry in ionic crystals can play a critical role in atomic nucleation and migration during solid-solid phase transformation. Similarly, octahedron distortion, which is characterized by Goldschmidt tolerance factor,...
5.
Lee D, Lee S, Sim H, Park Y, Choi S, Son J
Sci Adv
. 2024 Apr;
10(14):eadk8836.
PMID: 38578998
Electrical manipulation of the metal-insulator transition (MIT) in quantum materials has attracted considerable attention toward the development of ultracompact neuromorphic devices because of their stimuli-triggered transformations. VO is expected to...
6.
Park Y, Sim H, Doh K, Jo M, Lee D, Choi S, et al.
Nano Lett
. 2022 Nov;
22(23):9306-9312.
PMID: 36395459
As an analogue of charged electron flows, the ionic flow could be controlled by the electronic band alignment due to the ambipolar nature of diffusion in the ionic crystal. Here,...
7.
Lee Y, Yoon D, Yu S, Sim H, Park Y, Nam Y, et al.
Adv Mater
. 2021 Nov;
34(5):e2107650.
PMID: 34783077
Programmable optoelectronic devices call for the reversible control of the photocarrier recombination process by in-gap states in oxide semiconductors. However, previous approaches to produce oxygen vacancies as a source of...
8.
Lee D, Park Y, Sim H, Park J, Kim Y, Kim G, et al.
Nat Commun
. 2021 Aug;
12(1):5019.
PMID: 34408136
Unrestricted integration of single-crystal oxide films on arbitrary substrates has been of great interest to exploit emerging phenomena from transition metal oxides for practical applications. Here, we demonstrate the release...
9.
Directional ionic transport across the oxide interface enables low-temperature epitaxy of rutile TiO
Park Y, Sim H, Jo M, Kim G, Yoon D, Han H, et al.
Nat Commun
. 2020 Mar;
11(1):1401.
PMID: 32179741
Heterogeneous interfaces exhibit the unique phenomena by the redistribution of charged species to equilibrate the chemical potentials. Despite recent studies on the electronic charge accumulation across chemically inert interfaces, the...
10.
Park J, Yoon H, Sim H, Choi S, Son J
ACS Nano
. 2020 Feb;
14(2):2533-2541.
PMID: 32040301
Electronic phase modulation based on hydrogen insertion/extraction is kinetically limited by the bulk hydrogen diffusion or surface exchange reaction, so slow hydrogen kinetics has been a fundamental challenge to be...