Hema C P Movva
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Explore the profile of Hema C P Movva including associated specialties, affiliations and a list of published articles.
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20
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235
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Recent Articles
1.
Nibhanupudi S, Roy A, Chowdhury S, Schalip R, Coupin M, Matthews K, et al.
ACS Appl Mater Interfaces
. 2024 Apr;
16(17):22326-22333.
PMID: 38635965
Low-temperature large-area growth of two-dimensional (2D) transition-metal dichalcogenides (TMDs) is critical for their integration with silicon chips. Especially, if the growth temperatures can be lowered below the back-end-of-line (BEOL) processing...
2.
Wu D, Li W, Rai A, Wu X, Movva H, Yogeesh M, et al.
Nano Lett
. 2019 Feb;
19(3):1976-1981.
PMID: 30779591
The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure...
3.
Kim K, Prasad N, Movva H, Burg G, Wang Y, Larentis S, et al.
Nano Lett
. 2018 Aug;
18(9):5967-5973.
PMID: 30105907
We investigate interlayer tunneling in heterostructures consisting of two tungsten diselenide (WSe) monolayers with controlled rotational alignment, and separated by hexagonal boron nitride. In samples where the two WSe monolayers...
4.
Movva H, Lovorn T, Fallahazad B, Larentis S, Kim K, Taniguchi T, et al.
Phys Rev Lett
. 2018 Mar;
120(10):107703.
PMID: 29570322
We present a combined experimental and theoretical study of valley populations in the valence bands of trilayer WSe_{2}. Shubnikov-de Haas oscillations show that trilayer holes populate two distinct subbands associated...
5.
Banu N, Singh S, Basu S, Roy A, Movva H, Lauter V, et al.
Nanotechnology
. 2018 Feb;
29(19):195703.
PMID: 29461256
Recently high density (HD) nonmagnetic cobalt has been discovered in a nanoscale cobalt thin film, grown on Si(111) single crystal. This form of cobalt is not only nonmagnetic but also...
6.
Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface
Park J, Sanne A, Guo Y, Amani M, Zhang K, Movva H, et al.
Sci Adv
. 2017 Oct;
3(10):e1701661.
PMID: 29062892
Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic...
7.
Trivedi T, Roy A, Movva H, Walker E, Bank S, Neikirk D, et al.
ACS Nano
. 2017 Jul;
11(7):7457-7467.
PMID: 28692797
As the focus of applied research in topological insulators (TI) evolves, the need to synthesize large-area TI films for practical device applications takes center stage. However, constructing scalable and adaptable...
8.
Movva H, Fallahazad B, Kim K, Larentis S, Taniguchi T, Watanabe K, et al.
Phys Rev Lett
. 2017 Jul;
118(24):247701.
PMID: 28665633
We report a study of the quantum Hall states (QHS) of holes in mono- and bilayer WSe_{2}. The QHS sequence transitions between predominantly even and predominantly odd filling factors as...
9.
Larentis S, Fallahazad B, Movva H, Kim K, Rai A, Taniguchi T, et al.
ACS Nano
. 2017 Apr;
11(5):4832-4839.
PMID: 28414214
Transition metal dichalcogenides are of interest for next generation switches, but the lack of low resistance electron and hole contacts in the same material has hindered the development of complementary...
10.
Banu N, Singh S, Satpati B, Roy A, Basu S, Chakraborty P, et al.
Sci Rep
. 2017 Feb;
7:41856.
PMID: 28157186
Because of the presence of 3d transition metals in the Earth's core, magnetism of these materials in their dense phases has been a topic of great interest. Theory predicts a...