Gregor Koblmuller
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Explore the profile of Gregor Koblmuller including associated specialties, affiliations and a list of published articles.
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Articles
37
Citations
142
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Recent Articles
1.
Scaparra B, Sirotti E, Ajay A, Jonas B, Costa B, Riedl H, et al.
ACS Appl Nano Mater
. 2024 Dec;
7(23):26854-26862.
PMID: 39697530
InAs semiconductor quantum dots (QDs) emitting in the near-infrared are promising platforms for on-demand single-photon sources and spin-photon interfaces. However, the realization of quantum-photonic nanodevices emitting in the telecom windows...
2.
Jeong H, Church S, Doblinger M, Ajay A, Haubmann B, Patel N, et al.
Nano Lett
. 2024 Nov;
24(45):14515-14521.
PMID: 39495491
Predicting the optical properties of large-scale ensembles of luminescent nanowire arrays that host active quantum heterostructures is of paramount interest for on-chip integrated photonic and quantum photonic devices. However, this...
3.
Ayuso-Perez I, Luna E, da Silva A, Ruhstorfer D, Matzeck M, Koblmuller G, et al.
Nanotechnology
. 2024 Apr;
35(32).
PMID: 38684144
Semiconductor nanowires (NWs) are promising candidates for use in electronic and optoelectronic applications, offering numerous advantages over their thin film counterparts. Their performance relies heavily on the quality of the...
4.
Esmaielpour H, Isaev N, Makhfudz I, Doblinger M, Finley J, Koblmuller G
ACS Appl Nano Mater
. 2024 Feb;
7(3):2817-2824.
PMID: 38357220
III-V nanowire structures are among the promising material systems with applications in hot carrier solar cells. These nanostructures can meet the requirements for such photovoltaic devices, i.e., the suppression of...
5.
Jeong H, Ajay A, Doblinger M, Sturm S, Gomez Ruiz M, Zell R, et al.
ACS Appl Nano Mater
. 2024 Feb;
7(3):3032-3041.
PMID: 38357219
III-V semiconductor nanowire (NW) heterostructures with axial InGaAs active regions hold large potential for diverse on-chip device applications, including site-selectively integrated quantum light sources, NW lasers with high material gain,...
6.
Schmiedeke P, Panciera F, Harmand J, Travers L, Koblmuller G
Nanoscale Adv
. 2023 Jun;
5(11):2994-3004.
PMID: 37260482
Nanowires (NWs) offer unique opportunities for tuning the properties of III-V semiconductors by simultaneously controlling their nanoscale dimensions and switching their crystal phase between zinc-blende (ZB) and wurtzite (WZ). While...
7.
Jeong H, Ajay A, Yu H, Doblinger M, Mukhundhan N, Finley J, et al.
Small
. 2023 Jan;
19(16):e2207531.
PMID: 36670090
Vapor-liquid-solid (VLS) growth is the mainstream method in realizing advanced semiconductor nanowires (NWs), as widely applied to many III-V compounds. It is exclusively explored also for antimony (Sb) compounds, such...
8.
Hill M, Schmiedeke P, Huang C, Maddali S, Hu X, Hruszkewycz S, et al.
ACS Nano
. 2022 Nov;
16(12):20281-20293.
PMID: 36378999
InGaAs quantum wells embedded in GaAs nanowires can serve as compact near-infrared emitters for direct integration onto Si complementary metal oxide semiconductor technology. While the core-shell geometry in principle allows...
9.
Denisov A, Bubis A, Piatrusha S, Titova N, Nasibulin A, Becker J, et al.
Nanomaterials (Basel)
. 2022 May;
12(9).
PMID: 35564170
Mesoscopic superconductivity deals with various quasiparticle excitation modes, only one of them-the charge-mode-being directly accessible for conductance measurements due to the imbalance in populations of quasi-electron and quasihole excitation branches....
10.
Sonner M, Gnedel M, Berlin J, Rudolph D, Koblmuller G, Krenner H
Nanotechnology
. 2021 Sep;
32(50).
PMID: 34584026
The authors report on a combined structural, optical and acousto-electric study of polytypic GaAs nanowires. Two types of nanowires with different zincblende and wurtzite crystal phase mixing are identified by...