Deyuan Lyu
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Explore the profile of Deyuan Lyu including associated specialties, affiliations and a list of published articles.
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5
Citations
14
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Recent Articles
1.
Yun H, Lyu D, Lv Y, Zink B, Khanal P, Zhou B, et al.
ACS Nano
. 2024 Aug;
18(37):25708-25715.
PMID: 39163394
As advances in computing technology increase demand for efficient data storage solutions, spintronic magnetic tunnel junction (MTJ)-based magnetic random-access memory (MRAM) devices emerge as promising alternatives to traditional charge-based memory...
2.
Lyu D, Shoup J, Huang D, Garcia-Barriocanal J, Jia Q, Echtenkamp W, et al.
Adv Funct Mater
. 2023 May;
23(18).
PMID: 37200959
As a promising alternative to the mainstream CoFeB/MgO system with interfacial perpendicular magnetic anisotropy (PMA), 1-FePd and its synthetic antiferromagnet (SAF) structure with large crystalline PMA can support spintronic devices...
3.
Zhou B, Khanal P, Benally O, Lyu D, Gopman D, Enriquez A, et al.
Sci Rep
. 2023 Mar;
13(1):3454.
PMID: 36859656
Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could...
4.
Zhang D, Bapna M, Jiang W, Sousa D, Liao Y, Zhao Z, et al.
Nano Lett
. 2022 Jan;
22(2):622-629.
PMID: 34982564
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier of the ferromagnetic...
5.
Huang M, Hasan M, Klyukin K, Zhang D, Lyu D, Gargiani P, et al.
Nat Nanotechnol
. 2021 Jul;
16(9):981-988.
PMID: 34326528
Voltage control of magnetic order is desirable for spintronic device applications, but 180° magnetization switching is not straightforward because electric fields do not break time-reversal symmetry. Ferrimagnets are promising candidates...