Chong Bi
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Explore the profile of Chong Bi including associated specialties, affiliations and a list of published articles.
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10
Citations
65
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Recent Articles
1.
Wang L, Dong J, Wu C, Yan C, Bi C, Xu C, et al.
Front Bioeng Biotechnol
. 2024 Aug;
12:1440150.
PMID: 39108599
Interleukin-6 (IL-6) is a cytokine that can bind to IL-6 receptor and induce pleiotropic effects. It serves as a critical biomarker, involved in inflammation amplification, tumor progression, and many other...
2.
Zhao Q, Zhu Y, Zhang H, Jiang B, Wang Y, Xie T, et al.
ACS Appl Mater Interfaces
. 2023 Sep;
15(39):46520-46526.
PMID: 37738105
The discoveries of two-dimensional ferromagnetism and magnetic semiconductors highly enrich the magnetic material family for constructing spin-based electronic devices, but with an acknowledged challenge that the Curie temperature () is...
3.
Dc M, Shao D, Hou V, Vailionis A, Quarterman P, Habiboglu A, et al.
Nat Mater
. 2023 Apr;
22(5):591-598.
PMID: 37012436
Large spin-orbit torques (SOTs) generated by topological materials and heavy metals interfaced with ferromagnets are promising for next-generation magnetic memory and logic devices. SOTs generated from y spin originating from...
4.
Li P, Ding J, Zhang S, Kally J, Pillsbury T, Heinonen O, et al.
Nano Lett
. 2020 Dec;
21(1):84-90.
PMID: 33356300
A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest...
5.
Li X, Sasaki T, Grezes C, Wu D, Wong K, Bi C, et al.
Nano Lett
. 2019 Nov;
19(12):8621-8629.
PMID: 31697502
Magnetic tunnel junctions (MTJs) capable of electrical read and write operations have emerged as a canonical building block for nonvolatile memory and logic. However, the cause of the widespread device...
6.
Li P, Kally J, Zhang S, Pillsbury T, Ding J, Csaba G, et al.
Sci Adv
. 2019 Sep;
5(8):eaaw3415.
PMID: 31497642
Topological surface states (TSSs) in a topological insulator are expected to be able to produce a spin-orbit torque that can switch a neighboring ferromagnet. This effect may be absent if...
7.
Newhouse-Illige T, Liu Y, Xu M, Reifsnyder Hickey D, Kundu A, Almasi H, et al.
Nat Commun
. 2017 May;
8:15232.
PMID: 28508882
Magnetic interlayer coupling is one of the central phenomena in spintronics. It has been predicted that the sign of interlayer coupling can be manipulated by electric fields, instead of electric...
8.
Bi C, Liu Y, Newhouse-Illige T, Xu M, Rosales M, Freeland J, et al.
Phys Rev Lett
. 2015 Jan;
113(26):267202.
PMID: 25615378
We demonstrate that magnetic properties of ultrathin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally...
9.
Wang M, Bi C, Li L, Long S, Liu Q, Lv H, et al.
Nat Commun
. 2014 Aug;
5:4598.
PMID: 25141267
Reversible resistive switching induced by an electric field in oxide-based resistive switching memory shows a promising application in future information storage and processing. It is believed that there are some...
10.
Bi C, Pan L, Xu M, Xiao J
J Nanosci Nanotechnol
. 2010 Dec;
10(12):8452-5.
PMID: 21121353
Unlike previous studies that emphasize the important role of thermodynamics or surface energy on the structure stabilization of ZnS nanocrystals, we successfully controlled the crystalline structure of ZnS nanocrystals simply...