Charles H Ahn
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Explore the profile of Charles H Ahn including associated specialties, affiliations and a list of published articles.
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27
Citations
213
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Recent Articles
1.
Wei W, Vu D, Zhang Z, Walker F, Ahn C
Sci Adv
. 2023 Jul;
9(27):eadh3327.
PMID: 37406111
We report on superconductivity in NdEuNiO using Eu as a 4f dopant of the parent NdNiO infinite-layer compound. We use an all-in situ molecular beam epitaxy reduction process to achieve...
2.
Kim J, Sohn B, Lee H, Lee S, Ko E, Hahn S, et al.
Adv Mater
. 2023 Feb;
35(15):e2208833.
PMID: 36739615
Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities, and great efforts have been made to manipulate interfacial electronic phases. However, realizing such phases is often hampered by...
3.
Liu C, Day R, Li F, Roemer R, Zhdanovich S, Gorovikov S, et al.
Nat Commun
. 2021 Jul;
12(1):4573.
PMID: 34321473
The mechanism of the enhanced superconductivity in monolayer FeSe/SrTiO has been enthusiastically studied and debated over the past decade. One specific observation has been taken to be of central importance:...
4.
Li F, Zou Y, Han M, Foyevtsova K, Shin H, Lee S, et al.
Sci Adv
. 2021 Feb;
7(2).
PMID: 33523988
Titanium monoxide (TiO), an important member of the rock salt 3d transition-metal monoxides, has not been studied in the stoichiometric single-crystal form. It has been challenging to prepare stoichiometric TiO...
5.
Pelliciari J, Lee S, Gilmore K, Li J, Gu Y, Barbour A, et al.
Nat Mater
. 2021 Jan;
20(2):188-193.
PMID: 33462465
Spin excitations of magnetic thin films are the founding element for magnetic devices in general. While spin dynamics have been extensively studied in bulk materials, the behaviour in mesoscopic films...
6.
Qi Y, Singh S, Lau C, Huang F, Xu X, Walker F, et al.
Phys Rev Lett
. 2021 Jan;
125(25):257603.
PMID: 33416369
Hafnia (HfO_{2})-based thin films have promising applications in nanoscale electronic devices due to their robust ferroelectricity and integration with silicon. Identifying and stabilizing the ferroelectric phases of HfO_{2} have attracted...
7.
Lee S, Lee A, Georgescu A, Fabbris G, Han M, Zhu Y, et al.
Phys Rev Lett
. 2019 Oct;
123(11):117201.
PMID: 31573260
Through a combination of experimental measurements and theoretical modeling, we describe a strongly orbital-polarized insulating ground state in an (LaTiO_{3})_{2}/(LaCoO_{3})_{2} oxide heterostructure. X-ray absorption spectra and ab initio calculations show...
8.
Lee S, Tian G, Kim T, Jung H, Choi J, Walker F, et al.
Nanotechnology
. 2018 Dec;
30(10):105601.
PMID: 30537681
The structure, magnetic and ferroelectric properties of sputtered epitaxial CoFeO-BiFeO (CFO-BFO) nanocomposite thin films grown on LaSrMnO (LSMO) layers on (001) oriented SrTiO (STO) substrates and on STO-buffered Si are...
9.
Malashevich A, Marshall M, Visani C, Disa A, Xu H, Walker F, et al.
Nano Lett
. 2017 Dec;
18(1):573-578.
PMID: 29251937
Coherent and epitaxial interfaces permit the realization of electric field driven devices controlled by atomic-scale structural and electronic effects at interfaces. Compared to conventional field effect devices where channel conductivity...
10.
Dogan M, Fernandez-Pena S, Kornblum L, Jia Y, Kumah D, Reiner J, et al.
Nano Lett
. 2017 Dec;
18(1):241-246.
PMID: 29244954
A single atomic layer of ZrO exhibits ferroelectric switching behavior when grown with an atomically abrupt interface on silicon. Hysteresis in capacitance-voltage measurements of a ZrO gate stack demonstrate that...