A Wysmolek
Overview
Explore the profile of A Wysmolek including associated specialties, affiliations and a list of published articles.
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Articles
9
Citations
62
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Recent Articles
1.
Korona K, Binder J, Dabrowska A, Iwanski J, Reszka A, Korona T, et al.
Nanoscale
. 2023 May;
15(22):9864-9877.
PMID: 37227414
Defects play a very important role in semiconductors and only the control over the defect properties allows the implementation of materials in dedicated applications. We present an investigation of the...
2.
Iwanski J, Tatarczak P, Tokarczyk M, Da Browska A, Pawlowski J, Binder J, et al.
Nanotechnology
. 2022 Sep;
34(1).
PMID: 36174391
The recent progress in the growth of large-area boron nitride epilayers opens up new possibilities for future applications. However, it remains largely unclear how weakly attached two-dimensional BN layers interact...
3.
Koperski M, Pakula K, Nogajewski K, Dabrowska A, Tokarczyk M, Pelini T, et al.
Sci Rep
. 2021 Jul;
11(1):15506.
PMID: 34326349
We demonstrate quantum emission capabilities from boron nitride structures which are relevant for practical applications and can be seamlessly integrated into a variety of heterostructures and devices. First, the optical...
4.
Binder J, Howarth J, Withers F, Molas M, Taniguchi T, Watanabe K, et al.
Nat Commun
. 2019 May;
10(1):2335.
PMID: 31133651
The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high densities of excited carriers, a limit reachable...
5.
Grzeszczyk M, Golasa K, Molas M, Nogajewski K, Zinkiewicz M, Potemski M, et al.
Sci Rep
. 2018 Dec;
8(1):17745.
PMID: 30531971
We report a study of Raman scattering in few-layer MoTe focused on high-frequency out-of-plane vibrational modes near 291 cm which are associated with the bulk-inactive [Formula: see text] mode. Our...
6.
Binder J, Urban J, Stepniewski R, Strupinski W, Wysmolek A
Nanotechnology
. 2015 Dec;
27(4):045704.
PMID: 26655462
We present a novel measurement approach which combines the electrical characterization of solution-gated field-effect transistors based on epitaxial bilayer graphene on 4H-SiC (0001) with simultaneous Raman spectroscopy. By changing the...
7.
Orlita M, Faugeras C, Grill R, Wysmolek A, Strupinski W, Berger C, et al.
Phys Rev Lett
. 2011 Dec;
107(21):216603.
PMID: 22181904
The energy dependence of the electronic scattering time is probed by Landau level spectroscopy in quasineutral multilayer epitaxial graphene. From the broadening of overlapping Landau levels we find that the...
8.
Strupinski W, Grodecki K, Wysmolek A, Stepniewski R, Szkopek T, Gaskell P, et al.
Nano Lett
. 2011 Mar;
11(4):1786-91.
PMID: 21438581
We demonstrate the growth of high quality graphene layers by chemical vapor deposition (CVD) on insulating and conductive SiC substrates. This method provides key advantages over the well-developed epitaxial graphene...
9.
Stepniewski R, Wysmolek A, Potemski M, Pakula K, Baranowski J, Grzegory I, et al.
Phys Rev Lett
. 2003 Dec;
91(22):226404.
PMID: 14683260
Magnetoluminescence of the exciton bound to a neutral acceptor was measured to investigate the electronic structure of a shallow acceptor center in GaN. The application of magnetic fields along different...