Amplifying Electron-Donor Signal of the "Water Gate" Enabled Low Detection Ability of a Field-Effect Transistor-Based Humidity Sensor

Low humidity detection down to the parts per million level is urgently demanded in various industrial applications. The hardly detected tiny electrical signal variations caused by a very small amount of water adsorption are one of the intrinsic reasons that restrain the detection limit of the humidity sensors. Herein, a carbon-based field-effect transistor (FET) humidity sensor utilizing adsorbed water as the dual function of a sensing gate and analyte was proposed. Owing to the electron donor property of the "water gate" that can serve as a negative voltage exerted on the dielectric layer, the electrical conductivity of the FET's channel can be significantly modulated, therefore realizing signal amplification. The proposed sensor presents a detection limit of lower than 1% RH. Besides, the fabricated sensors show good batch consistency (response deviation of 0.5%), repeatability, long-term stability, and acceptable hysteresis (6.3% relative humidity (RH)) in humidity detection. We hope that our work can offer a novel strategy for the application and integration of low humidity detection from the device aspect rather than sensing materials synthesis.