Physical Vapor Deposition of High-Mobility P-Type Tellurium and Its Applications for Gate-Tunable Van Der Waals PN Photodiodes

Overview

Journal ACS Appl Mater Interfaces

Publisher American Chemical Society

Specialties Biomedical Engineering
Biotechnology

Date 2024 Dec 20

PMID 39704555

Authors

Tianyi Huang

Sen Lin

Jingyi Zou

Zexiao Wang

Yibai Zhong

Jingwei Li

Ruixuan Wang

Zhixing Wang

Kevin St Luce

Rex Kim

Jianzhou Cui

Han Wang

Qing Li

Min Xu

Sheng Shen

Xu Zhang

Affiliations

Soon will be listed here.

Abstract

Recently, tellurium has attracted resurgent interest due to its outstanding p-type characteristics and ambient environmental stability. Here, we present a substrate engineering-based physical vapor deposition method to synthesize high-quality Te nanoflakes and achieved a field-effect hole mobility of 1450 cm/(V s), which is, to the best of our knowledge, the highest among existing synthesized two-dimensional p-type semiconductors. The high mobility of Te enables the fabrication of Te/MoS PN diodes with highly gate-tunable characteristics. The Te/MoS heterostructure is demonstrated to be used as visible-light photodetectors with a current responsivity up to 630 A/W, which is about 1 order of magnitude higher than one achieved using p-type Si-MoS PN photodiodes. The photoresponse of Te/MoS heterojunctions also exhibits strong gate tunability due to their ultrathin thickness and unique band alignment. The successful synthesis of high-mobility Te and its integration into Te/MoS photodiodes show promise for the development of highly tunable and multifunctional photodetectors.

References

Liu B, Kopf M, Abbas A, Wang X, Guo Q, Jia Y . Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties. Adv Mater. 2015; 27(30):4423-4429. DOI: 10.1002/adma.201501758. View

Churchill H, Salamo G, Yu S, Hironaka T, Hu X, Stacy J . Toward Single Atom Chains with Exfoliated Tellurium. Nanoscale Res Lett. 2017; 12(1):488. PMC: 5552621. DOI: 10.1186/s11671-017-2255-x. View

Shin G, Park J, Lee K, Lee G, Jeon H, Choi Y . Si-MoS Vertical Heterojunction for a Photodetector with High Responsivity and Low Noise Equivalent Power. ACS Appl Mater Interfaces. 2019; 11(7):7626-7634. DOI: 10.1021/acsami.8b21629. View

Wu Z, Lyu Y, Zhang Y, Ding R, Zheng B, Yang Z . Large-scale growth of few-layer two-dimensional black phosphorus. Nat Mater. 2021; 20(9):1203-1209. DOI: 10.1038/s41563-021-01001-7. View

Kang S, Kocabas C, Ozel T, Shim M, Pimparkar N, Alam M . High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes. Nat Nanotechnol. 2008; 2(4):230-6. DOI: 10.1038/nnano.2007.77. View

Fang H, Chuang S, Chang T, Takei K, Takahashi T, Javey A . High-performance single layered WSe₂ p-FETs with chemically doped contacts. Nano Lett. 2012; 12(7):3788-92. DOI: 10.1021/nl301702r. View

Tan S, Abdelwahab I, Chu L, Poh S, Liu Y, Lu J . Quasi-Monolayer Black Phosphorus with High Mobility and Air Stability. Adv Mater. 2018; 30(6). DOI: 10.1002/adma.201704619. View

Chen X, Wu Y, Wu Z, Han Y, Xu S, Wang L . High-quality sandwiched black phosphorus heterostructure and its quantum oscillations. Nat Commun. 2015; 6:7315. PMC: 4557360. DOI: 10.1038/ncomms8315. View

Zhou G, Addou R, Wang Q, Honari S, Cormier C, Cheng L . High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth. Adv Mater. 2018; :e1803109. DOI: 10.1002/adma.201803109. View

10.

Yang P, Zha J, Gao G, Zheng L, Huang H, Xia Y . Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility. Nanomicro Lett. 2022; 14(1):109. PMC: 9018950. DOI: 10.1007/s40820-022-00852-2. View

11.

He Q, Liu Y, Tan C, Zhai W, Nam G, Zhang H . Quest for p-Type Two-Dimensional Semiconductors. ACS Nano. 2019; 13(11):12294-12300. DOI: 10.1021/acsnano.9b07618. View

12.

Allain A, Kis A . Electron and hole mobilities in single-layer WSe2. ACS Nano. 2014; 8(7):7180-5. DOI: 10.1021/nn5021538. View

13.

Cao Q, Han S, Tulevski G, Franklin A, Haensch W . Evaluation of field-effect mobility and contact resistance of transistors that use solution-processed single-walled carbon nanotubes. ACS Nano. 2012; 6(7):6471-7. DOI: 10.1021/nn302185d. View

14.

Zhou K, Shang G, Hsu H, Han S, Roy V, Zhou Y . Emerging 2D Metal Oxides: From Synthesis to Device Integration. Adv Mater. 2022; 35(21):e2207774. DOI: 10.1002/adma.202207774. View

15.

Novoselov K, Geim A, Morozov S, Jiang D, Zhang Y, Dubonos S . Electric field effect in atomically thin carbon films. Science. 2004; 306(5696):666-9. DOI: 10.1126/science.1102896. View

16.

Sang D, Wen B, Gao S, Zeng Y, Meng F, Guo Z . Electronic and Optical Properties of Two-Dimensional Tellurene: From First-Principles Calculations. Nanomaterials (Basel). 2019; 9(8). PMC: 6722590. DOI: 10.3390/nano9081075. View

17.

Xia F, Wang H, Jia Y . Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat Commun. 2014; 5:4458. DOI: 10.1038/ncomms5458. View

18.

Bianco E, Rao R, Snure M, Back T, Glavin N, McConney M . Large-area ultrathin Te films with substrate-tunable orientation. Nanoscale. 2020; 12(23):12613-12622. DOI: 10.1039/d0nr01251c. View

19.

Izquierdo N, Myers J, Golani P, De Los Santos A, Seaton N, Koester S . Growth of black arsenic phosphorus thin films and its application for field-effect transistors. Nanotechnology. 2021; 32(32). DOI: 10.1088/1361-6528/abfc09. View

20.

Zhao C, Tan C, Lien D, Song X, Amani M, Hettick M . Evaporated tellurium thin films for p-type field-effect transistors and circuits. Nat Nanotechnol. 2019; 15(1):53-58. DOI: 10.1038/s41565-019-0585-9. View