High-performance HS Gas Sensor Utilizing MXene/MoS Heterostructure Synthesized the Langmuir-Blodgett Technique and Chemical Vapor Deposition

In this study, we developed an HS gas sensor based on a MXene/MoS heterostructure, using the Langmuir-Blodgett (LB) technique and chemical vapor deposition (CVD). TiCT MXene nanosheets were uniformly transferred onto SiO/Si substrates the LB technique, achieving near-complete coverage. Subsequently, flower-like MoS was grown on the MXene-coated substrate through CVD, with vertical growth observed on the MXene layers. Our hybrid sensors exhibited a significant enhancement in gas response, with the MXene/MoS heterostructure showing a response of 0.5 to HS - approximately five times greater than that of pristine MXene. This improvement is attributed to the formation of a heterojunction, which increases electron mobility and reduces the depletion layer, enabling more efficient gas detection. Furthermore, the sensor demonstrated excellent selectivity for HS over other gases, including H, NO, NH, NO, and VOCs. The combination of the LB technique and CVD not only enhances gas sensor performance but also offers a promising strategy for synthesizing materials for various electrochemical applications.