Light-trapping by Wave Interference in Intermediate-thickness Silicon Solar Cells

The power conversion efficiency of crystalline silicon (c - Si) solar cells have witnessed a 2.1% increase over the last 25 years due to improved carrier transport. Recently, the conversion efficiency of c - Si cell has reached 27.1% but falls well below the Shockley-Queisser limit as well as the statistical ray-optics based 29.43% limit. Further improvement of conversion efficiency requires reconsideration of traditional ray-trapping strategies for sunlight absorption. Wave-interference based light-trapping in photonic crystals (PhC) provides the opportunity to break the ray-optics based 4n limit and offers the possibility of conversion efficiencies beyond 29.43% in c - Si cells. Using finite difference time domain simulations of Maxwell's equations, we demonstrate photo-current densities above the 4n limit in 50 - 300µm-thick inverted pyramid silicon PhCs, with lattice constant 3.1µm. Our 150µm-thick PhC design yields a maximum achievable photo-current density (MAPD) of 45.22mA/cm. We consider anti-reflection coatings and surface passivation consisting of SiO - SiN - AlO stacks. Our design optimization shows that a 80 - 120 - 150nm stack leads to slightly better solar light trapping in photonic crystal cells with thicknesses <50µm, whereas the 80 - 40 - 20nm stack performs better for cells with thicknesses >100µm. We show that replacing SiN with SiC may improve the MAPD for PhC cells thinner than 100µm. For a fixed lattice constant of 3.1µm, we find no significant improvement in the solar absorption for 50 and 100µm-thick cells relative to a 15µm cell. A substantial improvement in the MAPD is observed for the 150µm cell, but there is practically no improvement in the solar light absorption beyond 150µm thickness.