Electrical Transport Properties of PbS Quantum Dot/Graphene Heterostructures

Overview

Journal Nanomaterials (Basel)

Date 2024 Oct 25

PMID 39452992

Authors

Haosong Ying

Binbin Wei

Qing Zang

Jiduo Dong

Hao Zhang

Hao Tian

Chunheng Liu

Yang Liu

Affiliations

Soon will be listed here.

Abstract

The integration of PbS quantum dots (QDs) with graphene represents a notable advancement in enhancing the optoelectronic properties of quantum-dot-based devices. This study investigated the electrical transport properties of PbS quantum dot (QD)/graphene heterostructures, leveraging the high carrier mobility of graphene. We fabricated QD/graphene/SiO/Si heterostructures by synthesizing p-type monolayer graphene via chemical vapor deposition and spin-coating PbS QDs on the surface. Then, we used a low-temperature electrical transport measurement system to study the electrical transport properties of the heterostructure under different temperature, gate voltage, and light conditions and compared them with bare graphene samples. The results indicated that the QD/graphene samples exhibited higher resistance than graphene alone, with both resistances slightly increasing with temperature. The QD/graphene samples exhibited significant hole doping, with conductivity increasing from 0.0002 Ω to 0.0007 Ω under gate voltage modulation. As the temperature increased from 5 K to 300 K, hole mobility decreased from 1200 cmVs to 400 cmVs and electron mobility decreased from 800 cmVs to 200 cmVs. Infrared illumination reduced resistance, thereby enhancing conductivity, with a resistance change of about 0.4%/mW at a gate voltage of 125 V, demonstrating the potential of these heterostructures for infrared photodetector applications. These findings offer significant insights into the charge transport mechanisms in low-dimensional materials, paving the way for high-performance optoelectronic devices.

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