Advances in Group-10 Transition Metal Dichalcogenide PdSe-Based Photodetectors: Outlook and Perspectives

Overview

Journal Sensors (Basel)

Publisher MDPI

Specialty Biotechnology

Date 2024 Sep 28

PMID 39338871

Authors

Tawsif Ibne Alam

Kunxuan Liu

Sumaiya Umme Hani

Safayet Ahmed

Yuen Hong Tsang

Affiliations

Soon will be listed here.

Abstract

The recent advancements in low-dimensional material-based photodetectors have provided valuable insights into the fundamental properties of these materials, the design of their device architectures, and the strategic engineering approaches that have facilitated their remarkable progress. This review work consolidates and provides a comprehensive review of the recent progress in group-10 two-dimensional (2D) palladium diselenide (PdSe)-based photodetectors. This work first offers a general overview of the various types of PdSe photodetectors, including their operating mechanisms and key performance metrics. A detailed examination is then conducted on the physical properties of 2D PdSe material and how these metrics, such as structural characteristics, optical anisotropy, carrier mobility, and bandgap, influence photodetector device performance and potential avenues for enhancement. Furthermore, the study delves into the current methods for synthesizing PdSe material and constructing the corresponding photodetector devices. The documented device performances and application prospects are thoroughly discussed. Finally, this review speculates on the existing trends and future research opportunities in the field of 2D PdSe photodetectors. Potential directions for continued advancement of these optoelectronic devices are proposed and forecasted.

Citing Articles

Printed Two-Dimensional Materials for Flexible Photodetectors: Materials, Processes, and Applications.

Kong L, Wang S, Su Q, Liu Z, Liao G, Sun B Sensors (Basel). 2025; 25(4).

PMID: 40006272 PMC: 11860032. DOI: 10.3390/s25041042.

Photonic and Optoelectronic Devices and Systems, Second Edition.

Butt M Micromachines (Basel). 2025; 16(1).

PMID: 39858734 PMC: 11767509. DOI: 10.3390/mi16010079.

References

Lei T, Tu H, Lv W, Ma H, Wang J, Hu R . Ambipolar Photoresponsivity in an Ultrasensitive Photodetector Based on a WSe/InSe Heterostructure by a Photogating Effect. ACS Appl Mater Interfaces. 2021; 13(42):50213-50219. DOI: 10.1021/acsami.1c12330. View

Illarionov Y, Knobloch T, Jech M, Lanza M, Akinwande D, Vexler M . Insulators for 2D nanoelectronics: the gap to bridge. Nat Commun. 2020; 11(1):3385. PMC: 7341854. DOI: 10.1038/s41467-020-16640-8. View

Samadi M, Sarikhani N, Zirak M, Zhang H, Zhang H, Moshfegh A . Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives. Nanoscale Horiz. 2020; 3(2):90-204. DOI: 10.1039/c7nh00137a. View

Dai M, Chen H, Wang F, Long M, Shang H, Hu Y . Ultrafast and Sensitive Self-Powered Photodetector Featuring Self-Limited Depletion Region and Fully Depleted Channel with van der Waals Contacts. ACS Nano. 2020; 14(7):9098-9106. DOI: 10.1021/acsnano.0c04329. View

Qiu D, Gong C, Wang S, Zhang M, Yang C, Wang X . Recent Advances in 2D Superconductors. Adv Mater. 2021; 33(18):e2006124. DOI: 10.1002/adma.202006124. View

Afzal A, Dastgeer G, Iqbal M, Gautam P, Faisal M . High-Performance p-BP/n-PdSe Near-Infrared Photodiodes with a Fast and Gate-Tunable Photoresponse. ACS Appl Mater Interfaces. 2020; 12(17):19625-19634. DOI: 10.1021/acsami.9b22898. View

Lee C, Lee G, van der Zande A, Chen W, Li Y, Han M . Atomically thin p-n junctions with van der Waals heterointerfaces. Nat Nanotechnol. 2014; 9(9):676-81. DOI: 10.1038/nnano.2014.150. View

Guo Q, Pospischil A, Bhuiyan M, Jiang H, Tian H, Farmer D . Black Phosphorus Mid-Infrared Photodetectors with High Gain. Nano Lett. 2016; 16(7):4648-55. DOI: 10.1021/acs.nanolett.6b01977. View

Long M, Wang Y, Wang P, Zhou X, Xia H, Luo C . Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability. ACS Nano. 2019; 13(2):2511-2519. DOI: 10.1021/acsnano.8b09476. View

10.

Gibertini M, Koperski M, Morpurgo A, Novoselov K . Magnetic 2D materials and heterostructures. Nat Nanotechnol. 2019; 14(5):408-419. DOI: 10.1038/s41565-019-0438-6. View

11.

Oyedele A, Yang S, Feng T, Haglund A, Gu Y, Puretzky A . Defect-Mediated Phase Transformation in Anisotropic Two-Dimensional PdSe Crystals for Seamless Electrical Contacts. J Am Chem Soc. 2019; 141(22):8928-8936. DOI: 10.1021/jacs.9b02593. View

12.

Lu L, Chen G, Cheng H, Chuu C, Lu K, Chen C . Layer-Dependent and In-Plane Anisotropic Properties of Low-Temperature Synthesized Few-Layer PdSe Single Crystals. ACS Nano. 2020; 14(4):4963-4972. DOI: 10.1021/acsnano.0c01139. View

13.

Dong Z, Yu W, Zhang L, Mu H, Xie L, Li J . Highly Efficient, Ultrabroad PdSe Phototransistors from Visible to Terahertz Driven by Mutiphysical Mechanism. ACS Nano. 2021; 15(12):20403-20413. DOI: 10.1021/acsnano.1c08756. View

14.

Dai T, Chen C, Huang L, Jiang J, Peng L, Zhang Z . Ultrasensitive Magnetic Sensors Enabled by Heterogeneous Integration of Graphene Hall Elements and Silicon Processing Circuits. ACS Nano. 2020; 14(12):17606-17614. DOI: 10.1021/acsnano.0c08435. View

15.

Novoselov K, Geim A, Morozov S, Jiang D, Zhang Y, Dubonos S . Electric field effect in atomically thin carbon films. Science. 2004; 306(5696):666-9. DOI: 10.1126/science.1102896. View

16.

Liang F, Zhao X, Jiang J, Hu J, Xie W, Lv J . Light Confinement Effect Induced Highly Sensitive, Self-Driven Near-Infrared Photodetector and Image Sensor Based on Multilayer PdSe /Pyramid Si Heterojunction. Small. 2019; 15(44):e1903831. DOI: 10.1002/smll.201903831. View

17.

Chow W, Yu P, Liu F, Hong J, Wang X, Zeng Q . High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics. Adv Mater. 2017; 29(21). DOI: 10.1002/adma.201602969. View

18.

Viti L, Hu J, Coquillat D, Knap W, Tredicucci A, Politano A . Black Phosphorus Terahertz Photodetectors. Adv Mater. 2015; 27(37):5567-72. DOI: 10.1002/adma.201502052. View

19.

Quan S, Li L, Guo S, Zhao X, Weller D, Wang X . SnS/MoS van der Waals Heterostructure Photodetector with Ultrahigh Responsivity Realized by a Photogating Effect. ACS Appl Mater Interfaces. 2023; 15(51):59592-59599. DOI: 10.1021/acsami.3c13004. View

20.

Gupta S, Yang J, Yakobson B . Two-Level Quantum Systems in Two-Dimensional Materials for Single Photon Emission. Nano Lett. 2018; 19(1):408-414. DOI: 10.1021/acs.nanolett.8b04159. View