Room-temperature Ferroelectric, Piezoelectric and Resistive Switching Behaviors of Single-element Te Nanowires

Overview

Journal Nat Commun

Specialty Biology

Date 2024 Sep 2

PMID 39223121

Authors

Jinlei Zhang

Jiayong Zhang

Yaping Qi

Shuainan Gong

Hang Xu

Zhenqi Liu

Ran Zhang

Mohammad A Sadi

Demid Sychev

Run Zhao

Hongbin Yang

Zhenping Wu

Dapeng Cui

Lin Wang

Chunlan Ma

Xiaoshan Wu

Ju Gao

Yong P Chen

Xinran Wang

Yucheng Jiang

Affiliations

Soon will be listed here.

Abstract

Ferroelectrics are essential in memory devices for multi-bit storage and high-density integration. Ferroelectricity mainly exists in compounds but rare in single-element materials due to their lack of spontaneous polarization in the latter. However, we report a room-temperature ferroelectricity in quasi-one-dimensional Te nanowires. Piezoelectric characteristics, ferroelectric loops and domain reversals are clearly observed. We attribute the ferroelectricity to the ion displacement created by the interlayer interaction between lone-pair electrons. Ferroelectric polarization can induce a strong field effect on the transport along the Te chain, giving rise to a self-gated ferroelectric field-effect transistor. By utilizing ferroelectric Te nanowire as channel, the device exhibits high mobility (~220 cm·V·s), continuous-variable resistive states can be observed with long-term retention (>10 s), fast speed (<20 ns) and high-density storage (>1.92 TB/cm). Our work provides opportunities for single-element ferroelectrics and advances practical applications such as ultrahigh-density data storage and computing-in-memory devices.

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