Understanding the Resistive Switching Behaviors of Top Electrode (Au, Cu, and Al)-Dependent TiO-Based Memristive Devices

Overview

Journal ACS Omega

Publisher American Chemical Society

Specialty Chemistry

Date 2024 Jun 17

PMID 38882132

Authors

Yantao Yu

Zizhao Ding

Yaoying Ren

Xiangfei Wang

Hongguang Quan

Hong Jia

Chao Jiang

Affiliations

Soon will be listed here.

Abstract

Memristor-based neuromorphic computing is promising toward their potential application of handling complex parallel tasks in the period of big data. To implement brain-inspired applications of spiking neural networks, new physical architecture designs are needed. Here, a serial memristive structure (SMS) consisting of memristive devices with different top electrodes is proposed. Top electrodes Au, Cu, and Al are selected for nitrogen-doped TiO nanorod array-based memristive devices. The typical - cycles, retention, on/off ratio, and variations of cycle to cycle of top electrode-dependent memristive devices have been studied. Devices with Cu and Al electrodes exhibit a retention of over 10 s. And the resistance states of the device with the Al top electrode are reliable. Furthermore, the conductive mechanism underlining the - curves is discussed in detail. The interface-type mechanism and block conductance mechanism are illustrated, which are related to electron migration and ion/anion migration, respectively. Finally, the SMS has been constructed using memristive devices with Al and Cu top electrodes, which can mimic the spiking pulse-dependent plasticity of a synapse and a neuron body. The SMS provides a new approach to implement a fundamental physical unit for neuromorphic computing.

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