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Electronic and Molecular Adsorption Properties of Pt-Doped BCN: An Ab-Initio Investigation

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Date 2024 May 10
PMID 38727356
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Abstract

In the last two decades, significant efforts have been particularly invested in two-dimensional (2D) hexagonal boron carbon nitride -BCN because of its unique physical and chemical characteristics. The presence of the carbon atoms lowers the large gap of its cousin structure, boron nitride (BN), making it more suitable for various applications. Here, we use density functional theory to study the structural, electronic, and magnetic properties of Pt-doped BCN (Pt-BCN, as well as its adsorption potential of small molecular gases (NO, NO, CO, NH). We consider all distinct locations of the Pt atom in the supercell (B, N, and two C sites). Different adsorption locations are also considered for the pristine and Pt-doped systems. The formation energies of all Pt-doped structures are close to those of the pristine system, reflecting their stability. The pristine BCN is semiconducting, so doping with Pt at the B and N sites gives a diluted magnetic semiconductor while doping at the C1 and C2 sites results in a smaller gap semiconductor. We find that all doped structures exhibit direct band gaps. The studied molecules are very weakly physisorbed on the pristine structure. Pt doping leads to much stronger interactions, where NO, NO, and NH chemisorb on the doped systems, and CO physiorb, illustrating the doped systems' potential for gas purification applications. We also find that the adsorption changes the electronic and magnetic properties of the doped systems, inviting their consideration for spintronics and gas sensing.

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