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Enhanced BSA Detection Precision: Leveraging High-Performance Dual-Gate Ion-Sensitive Field-Effect-Transistor Scheme and Surface-Treated Sensing Membranes

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Specialty Biotechnology
Date 2024 Mar 27
PMID 38534248
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Abstract

Bovine serum albumin (BSA) is commonly incorporated in vaccines to improve stability. However, owing to potential allergic reactions in humans, the World Health Organization (WHO) mandates strict adherence to a BSA limit (≤50 ng/vaccine). BSA detection with conventional techniques is time-consuming and requires specialized equipment. Efficient alternatives such as the ion-sensitive field-effect transistor (ISFET), despite rapid detection, affordability, and portability, do not detect BSA at low concentrations because of inherent sensitivity limitations. This study proposes a silicon-on-insulator (SOI) substrate-based dual-gate (DG) ISFET platform to overcome these limitations. The capacitive coupling DG structure significantly enhances sensitivity without requiring external circuits, owing to its inherent amplification effect. The extended-gate (EG) structure separates the transducer unit for electrical signal processing from the sensing unit for biological detection, preventing chemical damage to the transducer, accommodating a variety of biological analytes, and affording easy replaceability. Vapor-phase surface treatment with (3-Aminopropyl) triethoxysilane (APTES) and the incorporation of a SnO sensing membrane ensure high BSA detection efficiency and sensitivity (144.19 mV/log [BSA]). This DG-FET-based biosensor possesses a simple structure and detects BSA at low concentrations rapidly. Envisioned as an effective on-site diagnostic tool for various analytes including BSA, this platform addresses prior limitations in biosensing and shows promise for practical applications.

References
1.
Chen Y, Sarangadharan I, Sukesan R, Hseih C, Lee G, Chyi J . High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity. Sci Rep. 2018; 8(1):8300. PMC: 5974191. DOI: 10.1038/s41598-018-26792-9. View

2.
Chen S, Bomer J, Carlen E, van den Berg A . Al2O3/silicon nanoISFET with near ideal nernstian response. Nano Lett. 2011; 11(6):2334-41. DOI: 10.1021/nl200623n. View

3.
Lyubchenko Y, Shlyakhtenko L, Harrington R, Oden P, Lindsay S . Atomic force microscopy of long DNA: imaging in air and under water. Proc Natl Acad Sci U S A. 1993; 90(6):2137-40. PMC: 46040. DOI: 10.1073/pnas.90.6.2137. View

4.
Crommelin D, Volkin D, Hoogendoorn K, Lubiniecki A, Jiskoot W . The Science is There: Key Considerations for Stabilizing Viral Vector-Based Covid-19 Vaccines. J Pharm Sci. 2020; 110(2):627-634. PMC: 7682479. DOI: 10.1016/j.xphs.2020.11.015. View

5.
Yu J, Gao G, Sun B, Liang L, Shen Q, Zhang Y . Optimization of sensing-pad functionalizing strategy toward separative extended-gate FET biosensors for PSA detection. J Pharm Biomed Anal. 2022; 211:114597. DOI: 10.1016/j.jpba.2022.114597. View