Phase-selective In-plane Heteroepitaxial Growth of H-phase CrSe

Overview

Journal Nat Commun

Specialty Biology

Date 2024 Feb 26

PMID 38409207

Authors

Meizhuang Liu

Jian Gou

Zizhao Liu

Zuxin Chen

Yuliang Ye

Jing Xu

Xiaozhi Xu

Dingyong Zhong

Goki Eda

Andrew T S Wee

Affiliations

Soon will be listed here.

Abstract

Phase engineering of two-dimensional transition metal dichalcogenides (2D-TMDs) offers opportunities for exploring unique phase-specific properties and achieving new desired functionalities. Here, we report a phase-selective in-plane heteroepitaxial method to grow semiconducting H-phase CrSe. The lattice-matched MoSe nanoribbons are utilized as the in-plane heteroepitaxial template to seed the growth of H-phase CrSe with the formation of MoSe-CrSe heterostructures. Scanning tunneling microscopy and non-contact atomic force microscopy studies reveal the atomically sharp heterostructure interfaces and the characteristic defects of mirror twin boundaries emerging in the H-phase CrSe monolayers. The type-I straddling band alignments with band bending at the heterostructure interfaces are directly visualized with atomic precision. The mirror twin boundaries in the H-phase CrSe exhibit the Tomonaga-Luttinger liquid behavior in the confined one-dimensional electronic system. Our work provides a promising strategy for phase engineering of 2D TMDs, thereby promoting the property research and device applications of specific phases.

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