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Monte Carlo Computer Simulations of Spin-Transfer Torque

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Publisher MDPI
Date 2023 Oct 28
PMID 37895709
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Abstract

This article performs computer simulations of the change in magnetization in the ferromagnetic film when polarized electric current passes through it. The model examines multilayer structures from ferromagnetic and nonmagnetic films. A sandwich system comprises two ferromagnetic layers separated by a nonmagnetic gasket. Ferromagnetic films have different magnetic susceptibility. The first ferromagnetic film is magnetically hard and acts as a fixed layer. The second ferromagnetic film is magnetically soft, with a switched direction of magnetization. The current direction is perpendicular to the film plane (CPP geometry). Spin transfer is carried out by electrons that polarize in the first ferromagnetic film and transmit spin to the second ferromagnetic film. We use the Ising model to describe the magnetic properties of the system and the Metropolis algorithm to form the thermodynamic states of the spin system. Simulations are performed at temperatures below the Curie points for both materials. The result of computer simulation is the dependence of magnetization in the magnetically soft film on the current strength in the system. Calculations show that there is a critical value of the current at which the magnetization sign of the controlled film changes. The magnetization versus current plot is stepwise. The change in the magnetization sign is due to an increase in the polarization of the electron gas. The plot of electron gas polarization versus current is also stepwise.

References
1.
Morab S, Sundaram M, Pivrikas A . Influence of Traps and Lorentz Force on Charge Transport in Organic Semiconductors. Materials (Basel). 2023; 16(13). PMC: 10342843. DOI: 10.3390/ma16134691. View

2.
Bergeard N, Hehn M, Mangin S, Lengaigne G, Montaigne F, Lalieu M . Hot-Electron-Induced Ultrafast Demagnetization in Co/Pt Multilayers. Phys Rev Lett. 2016; 117(14):147203. DOI: 10.1103/PhysRevLett.117.147203. View

3.
Morab S, Sundaram M, Pivrikas A . Time-Dependent Charge Carrier Transport with Hall Effect in Organic Semiconductors for Langevin and Non-Langevin Systems. Nanomaterials (Basel). 2022; 12(24). PMC: 9782042. DOI: 10.3390/nano12244414. View

4.
Valet , Fert . Theory of the perpendicular magnetoresistance in magnetic multilayers. Phys Rev B Condens Matter. 1993; 48(10):7099-7113. DOI: 10.1103/physrevb.48.7099. View

5.
Brataas , Nazarov , BAUER . Finite-element theory of transport in ferromagnet-normal metal systems. Phys Rev Lett. 2000; 84(11):2481-4. DOI: 10.1103/PhysRevLett.84.2481. View