A Novel Broken-gap Chemical-bonded SiC/TiCO Heterojunction with Band to Band Tunneling: First-principles Investigation

A broken-gap heterojunction is a bright approach for designing tunneling field-effect transistors (TFETs) due to its distinct quantum tunneling mechanisms. In this study, we investigate the electronic structure and transport characteristics of a SiC/TiCO heterojunction, as well as the impacts of electric field and strain on the electronic properties density functional theory. We determine that the interfacial atoms of the heterojunction are covalently bonded, forming a type-III heterojunction with a broken-gap. There exists band-to-band tunneling (BTBT) from the valence band (VB) of SiC to the conduction band (CB) of TiCO. The creation of the heterojunction also enhances the carrier mobility arising from the large elastic modulus and the decrease of deformation potential. The current-voltage (-) characteristics of the device demonstrate a pronounced negative differential resistance (NDR) effect, along with a current that is about ten times greater than that of the vdW type-III heterojunction. Moreover, the tunneling window of SiC/TiCO is only slightly altered when subjected to an external electric field and vertical strain, demonstrating the remarkable stability of its type-III band alignments. Our results indicate that the SiC/TiCO heterojunction is useful to construct high-performance TFETs, and also introduces new ideas to design TFETs by using type-III covalent-bond heterojunctions.