All-silicon Quantum Light Source by Embedding an Atomic Emissive Center in a Nanophotonic Cavity

Overview

Journal Nat Commun

Specialty Biology

Date 2023 Jun 7

PMID 37286540

Authors

W Redjem

Y Zhiyenbayev

W Qarony

V Ivanov

C Papapanos

W Liu

K Jhuria

Z Y Al Balushi

S Dhuey

A Schwartzberg

L Z Tan

T Schenkel

B Kante

Affiliations

Soon will be listed here.

Abstract

Silicon is the most scalable optoelectronic material but has suffered from its inability to generate directly and efficiently classical or quantum light on-chip. Scaling and integration are the most fundamental challenges facing quantum science and technology. We report an all-silicon quantum light source based on a single atomic emissive center embedded in a silicon-based nanophotonic cavity. We observe a more than 30-fold enhancement of luminescence, a near-unity atom-cavity coupling efficiency, and an 8-fold acceleration of the emission from the all-silicon quantum emissive center. Our work opens immediate avenues for large-scale integrated cavity quantum electrodynamics and quantum light-matter interfaces with applications in quantum communication and networking, sensing, imaging, and computing.

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References

Komza L, Samutpraphoot P, Odeh M, Tang Y, Mathew M, Chang J . Indistinguishable photons from an artificial atom in silicon photonics. Nat Commun. 2024; 15(1):6920. PMC: 11319600. DOI: 10.1038/s41467-024-51265-1. View

Dowling J, Milburn G . Quantum technology: the second quantum revolution. Philos Trans A Math Phys Eng Sci. 2003; 361(1809):1655-74. DOI: 10.1098/rsta.2003.1227. View

Arute F, Arya K, Babbush R, Bacon D, Bardin J, Barends R . Quantum supremacy using a programmable superconducting processor. Nature. 2019; 574(7779):505-510. DOI: 10.1038/s41586-019-1666-5. View

Wan N, Lu T, Chen K, Walsh M, Trusheim M, De Santis L . Large-scale integration of artificial atoms in hybrid photonic circuits. Nature. 2020; 583(7815):226-231. DOI: 10.1038/s41586-020-2441-3. View

Santiago-Cruz T, Gennaro S, Mitrofanov O, Addamane S, Reno J, Brener I . Resonant metasurfaces for generating complex quantum states. Science. 2022; 377(6609):991-995. DOI: 10.1126/science.abq8684. View

Contractor R, Noh W, Redjem W, Qarony W, Martin E, Dhuey S . Scalable single-mode surface-emitting laser via open-Dirac singularities. Nature. 2022; 608(7924):692-698. DOI: 10.1038/s41586-022-05021-4. View

Devoret M, Schoelkopf R . Superconducting circuits for quantum information: an outlook. Science. 2013; 339(6124):1169-74. DOI: 10.1126/science.1231930. View

Higginbottom D, Kurkjian A, Chartrand C, Kazemi M, Brunelle N, MacQuarrie E . Optical observation of single spins in silicon. Nature. 2022; 607(7918):266-270. DOI: 10.1038/s41586-022-04821-y. View

Zhiyenbayev Y, Redjem W, Ivanov V, Qarony W, Papapanos C, Simoni J . Scalable manufacturing of quantum light emitters in silicon under rapid thermal annealing. Opt Express. 2023; 31(5):8352-8362. DOI: 10.1364/OE.482311. View

10.

Hayee F, Yu L, Zhang J, Ciccarino C, Nguyen M, Marshall A . Revealing multiple classes of stable quantum emitters in hexagonal boron nitride with correlated optical and electron microscopy. Nat Mater. 2020; 19(5):534-539. DOI: 10.1038/s41563-020-0616-9. View

11.

Monroe C, Kim J . Scaling the ion trap quantum processor. Science. 2013; 339(6124):1164-9. DOI: 10.1126/science.1231298. View

12.

Santori C, Fattal D, Vuckovic J, Solomon G, Yamamoto Y . Indistinguishable photons from a single-photon device. Nature. 2002; 419(6907):594-7. DOI: 10.1038/nature01086. View

13.

Koperski M, Nogajewski K, Arora A, Cherkez V, Mallet P, Veuillen J . Single photon emitters in exfoliated WSe2 structures. Nat Nanotechnol. 2015; 10(6):503-6. DOI: 10.1038/nnano.2015.67. View

14.

de Leon N, Itoh K, Kim D, Mehta K, Northup T, Paik H . Materials challenges and opportunities for quantum computing hardware. Science. 2021; 372(6539). DOI: 10.1126/science.abb2823. View

15.

Kimble H . The quantum internet. Nature. 2008; 453(7198):1023-30. DOI: 10.1038/nature07127. View

16.

Tran T, Bray K, Ford M, Toth M, Aharonovich I . Quantum emission from hexagonal boron nitride monolayers. Nat Nanotechnol. 2015; 11(1):37-41. DOI: 10.1038/nnano.2015.242. View

17.

Yablonovitch . Inhibited spontaneous emission in solid-state physics and electronics. Phys Rev Lett. 1987; 58(20):2059-2062. DOI: 10.1103/PhysRevLett.58.2059. View

18.

Hollenbach M, Berencen Y, Kentsch U, Helm M, Astakhov G . Engineering telecom single-photon emitters in silicon for scalable quantum photonics. Opt Express. 2020; 28(18):26111-26121. DOI: 10.1364/OE.397377. View

19.

Clarke J, Wilhelm F . Superconducting quantum bits. Nature. 2008; 453(7198):1031-42. DOI: 10.1038/nature07128. View

20.

Hollenbach M, Klingner N, Jagtap N, Bischoff L, Fowley C, Kentsch U . Wafer-scale nanofabrication of telecom single-photon emitters in silicon. Nat Commun. 2022; 13(1):7683. PMC: 9744816. DOI: 10.1038/s41467-022-35051-5. View