Tailoring the Epitaxial Growth of Oriented Te Nanoribbon Arrays

Overview

Journal iScience

Publisher Cell Press

Date 2023 Mar 10

PMID 36895655

Authors

Jie Li

Junrong Zhang

Junwei Chu

Liu Yang

Xinxin Zhao

Yan Zhang

Tong Liu

Yang Lu

Cheng Chen

Xingang Hou

Long Fang

Yijun Xu

Junyong Wang

Kai Zhang

Affiliations

Soon will be listed here.

Abstract

As an elemental semiconductor, tellurium (Te) has been famous for its high hole-mobility, excellent ambient stability and topological states. Here, we realize the controllable synthesis of horizontal Te nanoribbon arrays (TRAs) with an angular interval of 60°on mica substrates by physical vapor deposition strategy. The growth of Te nanoribbons (TRs) is driven by two factors, where the intrinsic quasi-one-dimensional spiral chain structure promotes the elongation of their length; the epitaxy relationship between [110] direction of Te and [110] direction of mica facilitates the oriented growth and the expansion of their width. The bending of TRs which have not been reported is induced by grain boundary. Field-effect transistors based on TRs demonstrate high mobility and on/off ratio corresponding to 397 cm V s and 1.5×10, respectively. These phenomena supply an opportunity to deep insight into the vapor-transport synthesis of low-dimensional Te and explore its underlying application in monolithic integration.

Citing Articles

Tellurium and Nano-Tellurium: Medicine or Poison?.

Sari D, Ferroudj A, Semsey D, El-Ramady H, Brevik E, Prokisch J Nanomaterials (Basel). 2024; 14(8).

PMID: 38668165 PMC: 11053935. DOI: 10.3390/nano14080670.

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