High-Frequency Sheet Conductance of Nanolayered WS Crystals for Two-Dimensional Nanodevices

Overview

Journal ACS Appl Nano Mater

Publisher American Chemical Society

Date 2022 Nov 7

PMID 36338326

Authors

Stan E T Ter Huurne

Adonai Rodrigues Da Cruz

Niels van Hoof

Rasmus H Godiksen

Sara A Elrafei

Alberto G Curto

Michael E Flatte

Jaime Gomez Rivas

Affiliations

Soon will be listed here.

Abstract

Time-resolved terahertz (THz) spectroscopy is a powerful technique for the determination of charge transport properties in photoexcited semiconductors. However, the relatively long wavelengths of THz radiation and the diffraction limit imposed by optical imaging systems reduce the applicability of THz spectroscopy to large samples with dimensions in the millimeter to centimeter range. Exploiting THz near-field spectroscopy, we present the first time-resolved THz measurements on a single exfoliated 2D nanolayered crystal of a transition metal dichalcogenide (WS). The high spatial resolution of THz near-field spectroscopy enables mapping of the sheet conductance for an increasing number of atomic layers. The single-crystalline structure of the nanolayered crystal allows for the direct observation of low-energy phonon modes, which are present in all thicknesses, coupling with free carriers. Density functional theory calculations show that the phonon mode corresponds to the breathing mode between atomic layers in the weakly bonded van der Waals layers, which can be strongly influenced by substrate-induced strain. The non-invasive and high-resolution mapping technique of carrier dynamics in nanolayered crystals by time-resolved THz time domain spectroscopy enables possibilities for the investigation of the relation between phonons and charge transport in nanoscale semiconductors for applications in two-dimensional nanodevices.

References

Zhao Y, Luo X, Li H, Zhang J, Araujo P, Gan C . Interlayer breathing and shear modes in few-trilayer MoS2 and WSe2. Nano Lett. 2013; 13(3):1007-15. DOI: 10.1021/nl304169w. View

Wang H, Zhang C, Rana F . Surface Recombination Limited Lifetimes of Photoexcited Carriers in Few-Layer Transition Metal Dichalcogenide MoS₂. Nano Lett. 2015; 15(12):8204-10. DOI: 10.1021/acs.nanolett.5b03708. View

Jo S, Ubrig N, Berger H, Kuzmenko A, Morpurgo A . Mono- and bilayer WS2 light-emitting transistors. Nano Lett. 2014; 14(4):2019-25. DOI: 10.1021/nl500171v. View

van Hoof N, Huurne S, Gomez Rivas J, Halpin A . Time-resolved terahertz time-domain near-field microscopy. Opt Express. 2019; 26(24):32118-32129. DOI: 10.1364/OE.26.032118. View

Kresse , Furthmuller . Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys Rev B Condens Matter. 1996; 54(16):11169-11186. DOI: 10.1103/physrevb.54.11169. View

Bernardi M, Palummo M, Grossman J . Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials. Nano Lett. 2013; 13(8):3664-70. DOI: 10.1021/nl401544y. View

Marin E, Marian D, Perucchini M, Fiori G, Iannaccone G . Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source. ACS Nano. 2020; 14(2):1982-1989. PMC: 7993756. DOI: 10.1021/acsnano.9b08489. View

Mak K, Lee C, Hone J, Shan J, Heinz T . Atomically thin MoS₂: a new direct-gap semiconductor. Phys Rev Lett. 2011; 105(13):136805. DOI: 10.1103/PhysRevLett.105.136805. View

Docherty C, Parkinson P, Joyce H, Chiu M, Chen C, Lee M . Ultrafast transient terahertz conductivity of monolayer MoS₂ and WSe₂ grown by chemical vapor deposition. ACS Nano. 2014; 8(11):11147-53. DOI: 10.1021/nn5034746. View

10.

Tsai D, Liu K, Lien D, Tsai M, Kang C, Lin C . Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments. ACS Nano. 2013; 7(5):3905-11. DOI: 10.1021/nn305301b. View

11.

Iwaszczuk K, Cooke D, Fujiwara M, Hashimoto H, Jepsen P . Simultaneous reference and differential waveform acquisition in time-resolved terahertz spectroscopy. Opt Express. 2009; 17(24):21969-76. DOI: 10.1364/OE.17.021969. View

12.

Li Y, Li X, Yu T, Yang G, Chen H, Zhang C . Accurate identification of layer number for few-layer WS and WSe via spectroscopic study. Nanotechnology. 2018; 29(12):124001. DOI: 10.1088/1361-6528/aaa923. View

13.

Kresse , Hafner . Ab initio molecular dynamics for liquid metals. Phys Rev B Condens Matter. 1993; 47(1):558-561. DOI: 10.1103/physrevb.47.558. View

14.

Rini M, Tobey R, Dean N, Itatani J, Tomioka Y, Tokura Y . Control of the electronic phase of a manganite by mode-selective vibrational excitation. Nature. 2007; 449(7158):72-4. DOI: 10.1038/nature06119. View

15.

Schweicher G, DAvino G, Ruggiero M, Harkin D, Broch K, Venkateshvaran D . Chasing the "Killer" Phonon Mode for the Rational Design of Low-Disorder, High-Mobility Molecular Semiconductors. Adv Mater. 2019; 31(43):e1902407. DOI: 10.1002/adma.201902407. View

16.

Liang L, Zhang J, Sumpter B, Tan Q, Tan P, Meunier V . Low-Frequency Shear and Layer-Breathing Modes in Raman Scattering of Two-Dimensional Materials. ACS Nano. 2017; 11(12):11777-11802. DOI: 10.1021/acsnano.7b06551. View

17.

Kufer D, Konstantatos G . Highly Sensitive, Encapsulated MoS2 Photodetector with Gate Controllable Gain and Speed. Nano Lett. 2015; 15(11):7307-13. DOI: 10.1021/acs.nanolett.5b02559. View

18.

M T, Late D . Temperature dependent phonon shifts in single-layer WS(2). ACS Appl Mater Interfaces. 2013; 6(2):1158-63. DOI: 10.1021/am404847d. View

19.

Zhao D, Hu H, Haselsberger R, Marcus R, Michel-Beyerle M, Lam Y . Monitoring Electron-Phonon Interactions in Lead Halide Perovskites Using Time-Resolved THz Spectroscopy. ACS Nano. 2019; 13(8):8826-8835. DOI: 10.1021/acsnano.9b02049. View