Cu Oxidation Kinetics Through Graphene and Its Effect on the Electrical Properties of Graphene

The oxidation kinetics of Cu through graphene were evaluated from the surface coverage of Cu oxide ( ) by varying the oxidation time ( = 10-360 min) and temperature ( = 180-240 °C) under an air environment. , as a function of time, well followed the Johnson-Mehl-Avrami-Kolmogorov equation; thus, the activation energy of Cu oxidation was estimated as 1.5 eV. Transmission electron microscopy studies revealed that CuO formed on the top of the graphene at grain boundaries (G-GBs), indicating that CuO growth was governed by the out-diffusion of Cu through G-GBs. Further, the effect of Cu oxidation on graphene quality was investigated by measuring the electrical properties of graphene after transferring. The variation of the sheet resistance ( ) as a function of at all was converted into one curve as a function of . of 250 Ω sq was constant, similar to that of as-grown graphene up to = 15%, and then increased with . The Hall measurement revealed that the carrier concentration remained constant in the entire range of , and was solely related to the decrease in the Hall mobility. The variation in Hall mobility was examined according to the graphene percolation probability model, simulating electrical conduction on G-GBs during CuO evolution. This model well explains the constant Hall mobility within = 15% and drastic degradation of 15-50% by the concept that the electrical conduction of graphene is disconnected by CuO formation along with the G-GBs. Therefore, we systematically developed the oxidation kinetics of Cu through graphene and simultaneously examined the changes in the electrical properties of graphene.