High-Performance Photodetectors Based on the 2D SiAs/SnS Heterojunction

Overview

Journal Nanomaterials (Basel)

Date 2022 Feb 15

PMID 35159716

Authors

Yinchang Sun

Liming Xie

Zhao Ma

Ziyue Qian

Junyi Liao

Sabir Hussain

Hongjun Liu

Hailong Qiu

Juanxia Wu

Zhanggui Hu

Affiliations

Soon will be listed here.

Abstract

Constructing 2D heterojunctions with high performance is the critical solution for the optoelectronic applications of 2D materials. This work reports on the studies on the preparation of high-quality van der Waals SiAs single crystals and high-performance photodetectors based on the 2D SiAs/SnS heterojunction. The crystals are grown using the chemical vapor transport (CVT) method and then the bulk crystals are exfoliated to a few layers. Raman spectroscopic characterization shows that the low wavenumber peaks from interlayer vibrations shift significantly along with SiAs' thickness. In addition, when van der Waals heterojunctions of -type SiAs/-type SnS are fabricated, under the source-drain voltage of -1 V-1 V, they exhibit prominent rectification characteristics, and the ratio of forwarding conduction current to reverse shutdown current is close to 10, showing a muted response of 1 A/W under excitation light of 550 nm. The light responsivity and external quantum efficiency are increased by 100 times those of SiAs photodetectors. Our experimental results enrich the research on the IVA-VA group -type layered semiconductors.

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