An Ultrasensitive Silicon-Based Electrolyte-Gated Transistor for the Detection of Peanut Allergens

Overview

Journal Biosensors (Basel)

Specialty Biotechnology

Date 2022 Jan 20

PMID 35049652

Authors

Donghoon Kim

Bo Jin

Sol-A Kim

Wonyeong Choi

Seonghwan Shin

Jiwon Park

Won-Bo Shim

Kihyun Kim

Jeong-Soo Lee

Affiliations

Soon will be listed here.

Abstract

The highly sensitive detection of peanut allergens (PAs) using silicon-based electrolyte-gated transistors (Si-EGTs) was demonstrated. The Si-EGT was made using a top-down technique. The fabricated Si-EGT showed excellent intrinsic electrical characteristics, including a low threshold voltage of 0.7 V, low subthreshold swing of <70 mV/dec, and low gate leakage of <10 pA. Surface functionalization and immobilization of antibodies were performed for the selective detection of PAs. The voltage-related sensitivity () showed a constant behavior from the subthreshold regime to the linear regime. The current-related sensitivity () was high in the subthreshold regime and then significantly decreased as the drain current increased. The limit of detection (LOD) was calculated to be as low as 25 pg/mL based on characteristics, which is the lowest value reported to date in the literature for various sensor methodologies. The Si-EGT showed selective detection of PA through a non-specific control test. These results confirm that Si-EGT is a high-sensitivity and low-power biosensor for PA detection.

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