Graphene Growth Directly on SiO/Si by Hot Filament Chemical Vapor Deposition

Overview

Journal Nanomaterials (Basel)

Date 2022 Jan 11

PMID 35010059

Authors

Sandra Rodriguez-Villanueva

Frank Mendoza

Alvaro A Instan

Ram S Katiyar

Brad R Weiner

Gerardo Morell

Affiliations

Soon will be listed here.

Abstract

We report the first direct synthesis of graphene on SiO/Si by hot-filament chemical vapor deposition. Graphene deposition was conducted at low pressures (35 Torr) with a mixture of methane/hydrogen and a substrate temperature of 970 °C followed by spontaneous cooling to room temperature. A thin copper-strip was deposited in the middle of the SiO/Si substrate as catalytic material. Raman spectroscopy mapping and atomic force microscopy measurements indicate the growth of few-layers of graphene over the entire SiO/Si substrate, far beyond the thin copper-strip, while X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy showed negligible amounts of copper next to the initially deposited strip. The scale of the graphene nanocrystal was estimated by Raman spectroscopy and scanning electron microscopy.

Citing Articles

Graphene Film Growth on Silicon Carbide by Hot Filament Chemical Vapor Deposition.

Rodriguez-Villanueva S, Mendoza F, Weiner B, Morell G Nanomaterials (Basel). 2022; 12(17).

PMID: 36080070 PMC: 9458213. DOI: 10.3390/nano12173033.

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