Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

Overview

Journal Nanomaterials (Basel)

Date 2021 Oct 23

PMID 34684996

Citations 9

Authors

Yuanhao Miao

Guilei Wang

Zhenzhen Kong

Buqing Xu

Xuewei Zhao

Xue Luo

Hongxiao Lin

Yan Dong

Bin Lu

Linpeng Dong

Jiuren Zhou

Jinbiao Liu

Henry H Radamson

Affiliations

Soon will be listed here.

Abstract

GeSn alloys have already attracted extensive attention due to their excellent properties and wide-ranging electronic and optoelectronic applications. Both theoretical and experimental results have shown that direct bandgap GeSn alloys are preferable for Si-based, high-efficiency light source applications. For the abovementioned purposes, molecular beam epitaxy (MBE), physical vapour deposition (PVD), and chemical vapor deposition (CVD) technologies have been extensively explored to grow high-quality GeSn alloys. However, CVD is the dominant growth method in the industry, and it is therefore more easily transferred. This review is focused on the recent progress in GeSn CVD growth (including ion implantation, in situ doping technology, and ohmic contacts), GeSn detectors, GeSn lasers, and GeSn transistors. These review results will provide huge advancements for the research and development of high-performance electronic and optoelectronic devices.

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