Boronate Probe-based Hydrogen Peroxide Detection with AlGaN/GaN HEMT Sensor

Overview

Journal Exp Biol Med (Maywood)

Specialty Biology

Date 2020 Nov 18

PMID 33203229

Citations 1

Authors

Isra Mahaboob

Roger J Reinertsen

Benjamin McEwen

Kasey Hogan

Emma Rocco

J Andres Melendez

Nathaniel C Cady

F Shahedipour-Sandvik

Affiliations

Soon will be listed here.

Abstract

The results from this study demonstrate the potential of an AlGaN/GaN high electron mobility transistor sensor for the detection of reactive and transient biological molecules such as hydrogen peroxide. A boronate-based fluorescent probe was used with this device to detect the presence of micromolar levels of hydrogen peroxide typically associated with intracellular processes. The real-time electrical response of the high electron mobility transistor sensor showed a gradual decrease in the two-dimensional electron gas current as the reaction proceeded over time. A corresponding increase in the emission intensity was measured from the fluorescent probe with the progression of the reaction. The fluorescence from the boronate probe was used as an indicator to confirm the detection of hydrogen peroxide. These results demonstrate the dynamic measurement capability of AlGaN/GaN high electron mobility transistor sensors in monitoring real-time reactions of reactive oxygen species such as hydrogen peroxide.

Citing Articles

MOCVD Growth and Characterization of Be-Doped GaN.

McEwen B, Reshchikov M, Rocco E, Meyers V, Hogan K, Andrieiev O ACS Appl Electron Mater. 2022; 4(8):3780-3785.

PMID: 36035967 PMC: 9407647. DOI: 10.1021/acsaelm.1c01276.

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