Post-thermal-Induced Recrystallization in GaAs/AlGaAs Quantum Dots Grown by Droplet Epitaxy with Near-Unity Stoichiometry

Overview

Journal ACS Omega

Publisher American Chemical Society

Specialty Chemistry

Date 2019 Aug 29

PMID 31458998

Citations 3

Authors

Inah Yeo

Kyung Soo Yi

Eun Hye Lee

Jin Dong Song

Jong Su Kim

Il Ki Han

Affiliations

Soon will be listed here.

Abstract

Here, we investigate the stoichiometry control of GaAs/AlGaAs droplet epitaxy (DE) quantum dots (QDs). Few tens of core nonstoichiometries in the Ga(As) atomic percent are revealed in as-grown "strain-free" QDs using state-of-the-art atomic-scale energy-dispersive X-ray spectroscopy based on transmission electron microscopy. Precise systematic analyses demonstrate a successful quenching of the nonstoichiometry below 2%. The control of the chemical reactions with well-controlled ex situ annealing sheds light on the engineering of a novel single-photon source of strain-free DE QDs free of defects.

Citing Articles

Atomic-Scale Characterization of Droplet Epitaxy Quantum Dots.

Gajjela R, Koenraad P Nanomaterials (Basel). 2021; 11(1).

PMID: 33401568 PMC: 7823520. DOI: 10.3390/nano11010085.

Comparative Chemico-Physical Analyses of Strain-Free GaAs/AlGaAs Quantum Dots Grown by Droplet Epitaxy.

Yeo I, Kim D, Lee K, Kim J, Song J, Park C Nanomaterials (Basel). 2020; 10(7).

PMID: 32630839 PMC: 7407363. DOI: 10.3390/nano10071301.

Strain-induced control of a pillar cavity-GaAs single quantum dot photon source.

Yeo I, Kim D, Han I, Song J Sci Rep. 2019; 9(1):18564.

PMID: 31811212 PMC: 6897991. DOI: 10.1038/s41598-019-55010-3.

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