Giant Gate-tunable Bandgap Renormalization and Excitonic Effects in a 2D Semiconductor

Overview

Journal Sci Adv

Specialties Biology
Science

Date 2019 Jul 24

PMID 31334350

Citations 11

Authors

Zhizhan Qiu

Maxim Trushin

Hanyan Fang

Ivan Verzhbitskiy

Shiyuan Gao

Evan Laksono

Ming Yang

Pin Lyu

Jing Li

Jie Su

Mykola Telychko

Kenji Watanabe

Takashi Taniguchi

Jishan Wu

A H Castro Neto

Li Yang

Goki Eda

Shaffique Adam

Jiong Lu

Affiliations

Soon will be listed here.

Abstract

Understanding the remarkable excitonic effects and controlling the exciton binding energies in two-dimensional (2D) semiconductors are crucial in unlocking their full potential for use in future photonic and optoelectronic devices. Here, we demonstrate large excitonic effects and gate-tunable exciton binding energies in single-layer rhenium diselenide (ReSe) on a back-gated graphene device. We used scanning tunneling spectroscopy and differential reflectance spectroscopy to measure the quasiparticle electronic and optical bandgap of single-layer ReSe, respectively, yielding a large exciton binding energy of 520 meV. Further, we achieved continuous tuning of the electronic bandgap and exciton binding energy of monolayer ReSe by hundreds of milli-electron volts through electrostatic gating, attributed to tunable Coulomb interactions arising from the gate-controlled free carriers in graphene. Our findings open a new avenue for controlling the bandgap renormalization and exciton binding energies in 2D semiconductors for a wide range of technological applications.

Citing Articles

Engineering anisotropic electrodynamics at the graphene/CrSBr interface.

Rizzo D, Seewald E, Zhao F, Cox J, Xie K, Vitalone R Nat Commun. 2025; 16(1):1853.

PMID: 39984457 PMC: 11845594. DOI: 10.1038/s41467-025-56804-y.

-Resolved Ultrafast Light-Induced Band Renormalization in Monolayer WS on Graphene.

Hofmann N, Steinhoff A, Krause R, Mishra N, Orlandini G, Forti S Nano Lett. 2025; 25(3):1214-1219.

PMID: 39772760 PMC: 11760173. DOI: 10.1021/acs.nanolett.4c06238.

Atomic and Electronic Structure of Defects in hBN: Enhancing Single-Defect Functionalities.

Qiu Z, Vaklinova K, Huang P, Grzeszczyk M, Watanabe K, Taniguchi T ACS Nano. 2024; 18(35):24035-24043.

PMID: 39163482 PMC: 11375783. DOI: 10.1021/acsnano.4c03640.

Evidence for electron-hole crystals in a Mott insulator.

Qiu Z, Han Y, Noori K, Chen Z, Kashchenko M, Lin L Nat Mater. 2024; 23(8):1055-1062.

PMID: 38831130 DOI: 10.1038/s41563-024-01910-3.

Direct characterization of intrinsic defects in monolayer ReSe on graphene.

Lam N, Ko J, Choi B, Ly T, Lee G, Jang K Nanoscale Adv. 2023; 5(20):5513-5519.

PMID: 37822900 PMC: 10563845. DOI: 10.1039/d3na00363a.

References

Perdew , Burke , Ernzerhof . Generalized Gradient Approximation Made Simple. Phys Rev Lett. 1996; 77(18):3865-3868. DOI: 10.1103/PhysRevLett.77.3865. View

Dean C, Young A, Meric I, Lee C, Wang L, Sorgenfrei S . Boron nitride substrates for high-quality graphene electronics. Nat Nanotechnol. 2010; 5(10):722-6. DOI: 10.1038/nnano.2010.172. View

Tang W, Sanville E, Henkelman G . A grid-based Bader analysis algorithm without lattice bias. J Phys Condens Matter. 2011; 21(8):084204. DOI: 10.1088/0953-8984/21/8/084204. View

Giannozzi P, Baroni S, Bonini N, Calandra M, Car R, Cavazzoni C . QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials. J Phys Condens Matter. 2011; 21(39):395502. DOI: 10.1088/0953-8984/21/39/395502. View

Yu W, Li Z, Zhou H, Chen Y, Wang Y, Huang Y . Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters. Nat Mater. 2012; 12(3):246-52. PMC: 4249642. DOI: 10.1038/nmat3518. View

Georgiou T, Jalil R, Belle B, Britnell L, Gorbachev R, Morozov S . Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. Nat Nanotechnol. 2012; 8(2):100-3. DOI: 10.1038/nnano.2012.224. View

Bertolazzi S, Krasnozhon D, Kis A . Nonvolatile memory cells based on MoS2/graphene heterostructures. ACS Nano. 2013; 7(4):3246-52. DOI: 10.1021/nn3059136. View

Britnell L, Ribeiro R, Eckmann A, Jalil R, Belle B, Mishchenko A . Strong light-matter interactions in heterostructures of atomically thin films. Science. 2013; 340(6138):1311-4. DOI: 10.1126/science.1235547. View

Geim A, Grigorieva I . Van der Waals heterostructures. Nature. 2013; 499(7459):419-25. DOI: 10.1038/nature12385. View

10.

Roy K, Padmanabhan M, Goswami S, Sai T, Ramalingam G, Raghavan S . Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices. Nat Nanotechnol. 2013; 8(11):826-30. DOI: 10.1038/nnano.2013.206. View

11.

Qiu D, da Jornada F, Louie S . Optical spectrum of MoS2: many-body effects and diversity of exciton states. Phys Rev Lett. 2013; 111(21):216805. DOI: 10.1103/PhysRevLett.111.216805. View

12.

Roy T, Tosun M, Kang J, Sachid A, Desai S, Hettick M . Field-effect transistors built from all two-dimensional material components. ACS Nano. 2014; 8(6):6259-64. DOI: 10.1021/nn501723y. View

13.

Zhang C, Johnson A, Hsu C, Li L, Shih C . Direct imaging of band profile in single layer MoS2 on graphite: quasiparticle energy gap, metallic edge states, and edge band bending. Nano Lett. 2014; 14(5):2443-7. DOI: 10.1021/nl501133c. View

14.

He K, Kumar N, Zhao L, Wang Z, Mak K, Zhao H . Tightly bound excitons in monolayer WSe(2). Phys Rev Lett. 2014; 113(2):026803. DOI: 10.1103/PhysRevLett.113.026803. View

15.

M Ugeda M, Bradley A, Shi S, da Jornada F, Zhang Y, Qiu D . Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor. Nat Mater. 2014; 13(12):1091-5. DOI: 10.1038/nmat4061. View

16.

Leong W, Luo X, Li Y, Khoo K, Quek S, Thong J . Low resistance metal contacts to MoS2 devices with nickel-etched-graphene electrodes. ACS Nano. 2014; 9(1):869-77. DOI: 10.1021/nn506567r. View

17.

Sheng W, Luo K, Zhou A . Communication: generalization of Koopmans' theorem to optical transitions in the Hubbard model of graphene nanodots. J Chem Phys. 2015; 142(2):021102. DOI: 10.1063/1.4905789. View

18.

Liang Y, Yang L . Carrier plasmon induced nonlinear band gap renormalization in two-dimensional semiconductors. Phys Rev Lett. 2015; 114(6):063001. DOI: 10.1103/PhysRevLett.114.063001. View

19.

Jung H, Tsai H, Wong D, Germany C, Kahn S, Kim Y . Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities. J Vis Exp. 2015; (101):e52711. PMC: 4544993. DOI: 10.3791/52711. View

20.

Chernikov A, van der Zande A, Hill H, Rigosi A, Velauthapillai A, Hone J . Electrical Tuning of Exciton Binding Energies in Monolayer WS_{2}. Phys Rev Lett. 2015; 115(12):126802. DOI: 10.1103/PhysRevLett.115.126802. View