Copper Iodide Interlayer for Improved Charge Extraction and Stability of Inverted Perovskite Solar Cells

Overview

Journal Materials (Basel)

Publisher MDPI

Date 2019 May 5

PMID 31052172

Citations 4

Authors

Danila Saranin

Pavel Gostischev

Dmitry Tatarinov

Inga Ermanova

Vsevolod Mazov

Dmitry Muratov

Alexey Tameev

Denis Kuznetsov

Sergey Didenko

Aldo Di Carlo

Affiliations

Soon will be listed here.

Abstract

Nickel oxide (NiO) is one of the most promising and high-performing Hole Transporting Layer (HTL) in inverted perovskite solar cells due to ideal band alignment with perovskite absorber, wide band gap, and high mobility of charges. At the same time, however, NiO does not provide good contact and trap-free junction for hole collection. In this paper, we examine this problem by developing a double hole transport configuration with a copper iodide (CuI) interlayer for efficient surface passivation. Transient photo-current (TPC) measurements showed that Perovskite/HTL interface with CuI interlayer has an improved hole injection; CuI passivation reduces the concentration of traps and the parasitic charge accumulation that limits the flow of charges. Moreover, we found that CuI protect the HTL/perovskite interface from degradation and consequently improve the stability of the cell. The presence of CuI interlayer induces an improvement of open-circuit voltage V (from 1.02 V to 1.07 V), an increase of the shunt resistance R (100%), a reduction of the series resistance R (-30%), and finally a +10% improvement of the solar cell efficiency.

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