Redox Gated Polymer Memristive Processing Memory Unit

Overview

Journal Nat Commun

Specialty Biology

Date 2019 Feb 15

PMID 30760719

Citations 8

Authors

Bin Zhang

Fei Fan

Wuhong Xue

Gang Liu

Yubin Fu

Xiaodong Zhuang

Xiao-Hong Xu

Junwei Gu

Run-Wei Li

Yu Chen

Affiliations

Soon will be listed here.

Abstract

Memristors with enormous storage capacity and superior processing efficiency are of critical importance to overcome the Moore's Law limitation and von Neumann bottleneck problems in the big data and artificial intelligence era. In particular, the integration of multifunctionalities into a single memristor promises an essential strategy of obtaining a high-performance electronic device that satisfies the nowadays increasing demands of data storage and processing. In this contribution, we report a proof-of-concept polymer memristive processing-memory unit that demonstrates programmable information storage and processing capabilities. By introducing redox active moieties of triphenylamine and ferrocene onto the pendants of fluorene skeletons, the conjugated polymer exhibits triple oxidation behavior and interesting memristive switching characteristics. Associated with the unique electrochemical and electrical behavior, the polymer device is capable of executing multilevel memory, decimal arithmetic operations of addition, subtraction, multiplication and division, as well as simple Boolean logic operations.

Citing Articles

Molecular HDD logic for encrypted massive data storage.

Guo B, Chen X, Chen A, Wang J, Xue W, Wang T Nat Commun. 2025; 16(1):2046.

PMID: 40016287 PMC: 11868525. DOI: 10.1038/s41467-025-57410-8.

Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices.

Kim S, Zhang H, Rubio-Magnieto J J Phys Chem Lett. 2024; 15(40):10087-10103.

PMID: 39331473 PMC: 11472375. DOI: 10.1021/acs.jpclett.4c02170.

Resistive Memory-Switching Behavior in Solution-Processed Trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) Benzene-PVA-Composite-Based Aryl Acrylate on ITO-Coated PET.

Kamath R, Sarkar P, Kaniyala Melanthota S, Biswas R, Mazumder N, De S Polymers (Basel). 2024; 16(2).

PMID: 38257018 PMC: 10818758. DOI: 10.3390/polym16020218.

Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory.

Li B, Zhang S, Xu L, Su Q, Du B Polymers (Basel). 2023; 15(22).

PMID: 38006098 PMC: 10675020. DOI: 10.3390/polym15224374.

An ultrasmall organic synapse for neuromorphic computing.

Liu S, Zeng J, Wu Z, Hu H, Xu A, Huang X Nat Commun. 2023; 14(1):7655.

PMID: 37996491 PMC: 10667342. DOI: 10.1038/s41467-023-43542-2.

References

Gu Q, He J, Chen D, Dong H, Li Y, Li H . Multilevel conductance switching of a memory device induced by enhanced intermolecular charge transfer. Adv Mater. 2015; 27(39):5968-73. DOI: 10.1002/adma.201502274. View

Fan F, Zhang B, Cao Y, Chen Y . Solution-processable poly(N-vinylcarbazole)-covalently grafted MoS nanosheets for nonvolatile rewritable memory devices. Nanoscale. 2017; 9(7):2449-2456. DOI: 10.1039/c6nr09241a. View

Geier M, McMorrow J, Xu W, Zhu J, Kim C, Marks T . Solution-processed carbon nanotube thin-film complementary static random access memory. Nat Nanotechnol. 2015; 10(11):944-8. DOI: 10.1038/nnano.2015.197. View

Barabasi A . Scale-free networks: a decade and beyond. Science. 2009; 325(5939):412-3. DOI: 10.1126/science.1173299. View

Bandyopadhyay A, Sahu S, Higuchi M . Tuning of nonvolatile bipolar memristive switching in Co(III) polymer with an extended azo aromatic ligand. J Am Chem Soc. 2011; 133(5):1168-71. DOI: 10.1021/ja106945v. View

Yan H, Choe H, Nam S, Hu Y, Das S, Klemic J . Programmable nanowire circuits for nanoprocessors. Nature. 2011; 470(7333):240-4. DOI: 10.1038/nature09749. View

Wong H, Salahuddin S . Memory leads the way to better computing. Nat Nanotechnol. 2015; 10(3):191-4. DOI: 10.1038/nnano.2015.29. View

Choi T, Lee K, Joo W, Lee S, Lee T, Chae M . Synthesis and nonvolatile memory behavior of redox-active conjugated polymer-containing ferrocene. J Am Chem Soc. 2007; 129(32):9842-3. DOI: 10.1021/ja0717459. View

Ling Q, Song Y, Lim S, Teo E, Tan Y, Zhu C . A dynamic random access memory based on a conjugated copolymer containing electron-donor and -acceptor moieties. Angew Chem Int Ed Engl. 2006; 45(18):2947-51. DOI: 10.1002/anie.200504365. View

10.

Yang J, Strukov D, Stewart D . Memristive devices for computing. Nat Nanotechnol. 2012; 8(1):13-24. DOI: 10.1038/nnano.2012.240. View

11.

Chakraborty C, Bera M, Rana U, Malik S . Vice versa donor acceptor fluorene-ferrocene alternate copolymer: a twisted ribbon for electrical switching. Chem Commun (Camb). 2015; 51(66):13123-6. DOI: 10.1039/c5cc04275e. View

12.

Shallcross R, Korner P, Maibach E, Kohnen A, Meerholz K . A photochromic diode with a continuum of intermediate states: towards high density multilevel storage. Adv Mater. 2013; 25(34):4807-13. DOI: 10.1002/adma.201301286. View

13.

Song Y, Di C, Yang X, Li S, Xu W, Liu Y . A cyclic triphenylamine dimer for organic field-effect transistors with high performance. J Am Chem Soc. 2006; 128(50):15940-1. DOI: 10.1021/ja064726s. View

14.

Zhang G, Musgrave C . Comparison of DFT methods for molecular orbital eigenvalue calculations. J Phys Chem A. 2007; 111(8):1554-61. DOI: 10.1021/jp061633o. View

15.

Ohno T, Hasegawa T, Tsuruoka T, Terabe K, Gimzewski J, Aono M . Short-term plasticity and long-term potentiation mimicked in single inorganic synapses. Nat Mater. 2011; 10(8):591-5. DOI: 10.1038/nmat3054. View

16.

Xue W, Liu G, Zhong Z, Dai Y, Shang J, Liu Y . A 1D Vanadium Dioxide Nanochannel Constructed via Electric-Field-Induced Ion Transport and its Superior Metal-Insulator Transition. Adv Mater. 2017; 29(39). DOI: 10.1002/adma.201702162. View

17.

Gu C, Lee J . Flexible Hybrid Organic-Inorganic Perovskite Memory. ACS Nano. 2016; 10(5):5413-8. DOI: 10.1021/acsnano.6b01643. View

18.

Lin W, Liu S, Gong T, Zhao Q, Huang W . Polymer-based resistive memory materials and devices. Adv Mater. 2013; 26(4):570-606. DOI: 10.1002/adma.201302637. View

19.

Kuzum D, Jeyasingh R, Lee B, Wong H . Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing. Nano Lett. 2011; 12(5):2179-86. DOI: 10.1021/nl201040y. View

20.

Chang T, Jo S, Lu W . Short-term memory to long-term memory transition in a nanoscale memristor. ACS Nano. 2011; 5(9):7669-76. DOI: 10.1021/nn202983n. View