Ultraviolet Detectors Based on Wide Bandgap Semiconductor Nanowire: A Review

Overview

Journal Sensors (Basel)

Publisher MDPI

Specialty Biotechnology

Date 2018 Jul 1

PMID 29958452

Citations 36

Authors

Yanan Zou

Yue Zhang

Yongming Hu

Haoshuang Gu

Affiliations

Soon will be listed here.

Abstract

Ultraviolet (UV) detectors have attracted considerable attention in the past decade due to their extensive applications in the civil and military fields. Wide bandgap semiconductor-based UV detectors can detect UV light effectively, and nanowire structures can greatly improve the sensitivity of sensors with many quantum effects. This review summarizes recent developments in the classification and principles of UV detectors, i.e., photoconductive type, Schottky barrier type, metal-semiconductor-metal (MSM) type, junction type and junction type. The current state of the art in wide bandgap semiconductor materials suitable for producing nanowires for use in UV detectors, i.e., metallic oxide, III-nitride and SiC, during the last five years is also summarized. Finally, novel types of UV detectors such as hybrid nanostructure detectors, self-powered detectors and flexible detectors are introduced.

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