Two-dimensional Electronic Transport and Surface Electron Accumulation in MoS

Overview

Journal Nat Commun

Specialty Biology

Date 2018 Apr 14

PMID 29650960

Citations 20

Authors

M D Siao

W C Shen

R S Chen

Z W Chang

M C Shih

Y P Chiu

C-M Cheng

Affiliations

Soon will be listed here.

Abstract

Because the surface-to-volume ratio of quasi-two-dimensional materials is extremely high, understanding their surface characteristics is crucial for practically controlling their intrinsic properties and fabricating p-type and n-type layered semiconductors. Van der Waals crystals are expected to have an inert surface because of the absence of dangling bonds. However, here we show that the surface of high-quality synthesized molybdenum disulfide (MoS) is a major n-doping source. The surface electron concentration of MoS is nearly four orders of magnitude higher than that of its inner bulk. Substantial thickness-dependent conductivity in MoS nanoflakes was observed. The transfer length method suggested the current transport in MoS following a two-dimensional behavior rather than the conventional three-dimensional mode. Scanning tunneling microscopy and angle-resolved photoemission spectroscopy measurements confirmed the presence of surface electron accumulation in this layered material. Notably, the in situ-cleaved surface exhibited a nearly intrinsic state without electron accumulation.

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