Highly Localized Charge Transfer Excitons in Metal Oxide Semiconductors

The ability to observe charge localization in photocatalytic materials on the ultrafast time scale promises to reveal important correlations between excited state electronic structure and photochemical energy conversion. Of particular interest is the ability to determine hole localization in the hybridized valence band of transition metal oxide semiconductors. Using femtosecond extreme ultraviolet reflection absorption (XUV-RA) spectroscopy we directly observe the formation of photoexcited electrons and holes in FeO, CoO, and NiO occurring within the 100 fs instrument response. In each material, holes localize to the O 2p valence band states as probed at the O L-edge, while electrons localize to metal 3d conduction band states on this same time scale as probed at the metal M-edge. Chemical shifts at the O L-edge enable unambiguous comparison of metal-oxygen (M-O) bond covalency. Pump flux dependent measurements show that the exciton radius is on the order of a single M-O bond length, revealing a highly localized nature of exciton in each metal oxide studied.