An Al₂O₃ Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials

Overview

Journal Nanomaterials (Basel)

Date 2017 Sep 23

PMID 28937619

Citations 2

Authors

Hang Yang

Shiqiao Qin

Xiaoming Zheng

Guang Wang

Yuan Tan

Gang Peng

Xueao Zhang

Affiliations

Soon will be listed here.

Abstract

We fabricated 70 nm Al₂O₃ gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al₂O₃/Si substrate is superior to that on a traditional 300 nm SiO₂/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al₂O₃/Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a higher dielectric constant. Furthermore, this substrate is also suitable for other 2D materials, such as WS₂, and can enhance the transconductance remarkably by 61.3 times. These results demonstrate a new and ideal substrate for the fabrication of 2D materials-based electronic logic devices.

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References

Dean C, Young A, Meric I, Lee C, Wang L, Sorgenfrei S . Boron nitride substrates for high-quality graphene electronics. Nat Nanotechnol. 2010; 5(10):722-6. DOI: 10.1038/nnano.2010.172. View

Kim Y, Kwon Y, Lee K, Oh Y, Um M, Seong D . Flexible Textile-Based Organic Transistors Using Graphene/Ag Nanoparticle Electrode. Nanomaterials (Basel). 2017; 6(8). PMC: 5224629. DOI: 10.3390/nano6080147. View

Alaboson J, Wang Q, Emery J, Lipson A, Bedzyk M, Elam J . Seeding atomic layer deposition of high-k dielectrics on epitaxial graphene with organic self-assembled monolayers. ACS Nano. 2011; 5(6):5223-32. DOI: 10.1021/nn201414d. View

Guerriero E, Polloni L, Rizzi L, Bianchi M, Mondello G, Sordan R . Graphene audio voltage amplifier. Small. 2012; 8(3):356-61. DOI: 10.1002/smll.201290016. View

Seyler K, Schaibley J, Gong P, Rivera P, Jones A, Wu S . Electrical control of second-harmonic generation in a WSe2 monolayer transistor. Nat Nanotechnol. 2015; 10(5):407-11. DOI: 10.1038/nnano.2015.73. View

Ni Z, Wang H, Kasim J, Fan H, Yu T, Wu Y . Graphene thickness determination using reflection and contrast spectroscopy. Nano Lett. 2007; 7(9):2758-63. DOI: 10.1021/nl071254m. View

Liao L, Bai J, Qu Y, Lin Y, Li Y, Huang Y . High-kappa oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors. Proc Natl Acad Sci U S A. 2010; 107(15):6711-5. PMC: 2872405. DOI: 10.1073/pnas.0914117107. View

Liao L, Bai J, Cheng R, Lin Y, Jiang S, Huang Y . Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics. Nano Lett. 2010; 10(5):1917-21. PMC: 2965644. DOI: 10.1021/nl100840z. View

Liao L, Lin Y, Bao M, Cheng R, Bai J, Liu Y . High-speed graphene transistors with a self-aligned nanowire gate. Nature. 2010; 467(7313):305-8. PMC: 2965636. DOI: 10.1038/nature09405. View

10.

Rao C, Sood A, Subrahmanyam K, Govindaraj A . Graphene: the new two-dimensional nanomaterial. Angew Chem Int Ed Engl. 2009; 48(42):7752-77. DOI: 10.1002/anie.200901678. View

11.

Skulason H, Gaskell P, Szkopek T . Optical reflection and transmission properties of exfoliated graphite from a graphene monolayer to several hundred graphene layers. Nanotechnology. 2010; 21(29):295709. DOI: 10.1088/0957-4484/21/29/295709. View

12.

Yin Z, Li H, Li H, Jiang L, Shi Y, Sun Y . Single-layer MoS2 phototransistors. ACS Nano. 2011; 6(1):74-80. DOI: 10.1021/nn2024557. View

13.

Lyu H, Lu Q, Huang Y, Ma T, Zhang J, Wu X . Graphene Distributed Amplifiers: Generating Desirable Gain for Graphene Field-Effect Transistors. Sci Rep. 2015; 5:17649. PMC: 4669444. DOI: 10.1038/srep17649. View

14.

Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A . Single-layer MoS2 transistors. Nat Nanotechnol. 2011; 6(3):147-50. DOI: 10.1038/nnano.2010.279. View

15.

Liao L, Bai J, Qu Y, Huang Y, Duan X . Single-layer graphene on Al2O3/Si substrate: better contrast and higher performance of graphene transistors. Nanotechnology. 2009; 21(1):015705. PMC: 2965640. DOI: 10.1088/0957-4484/21/1/015705. View

16.

Chen Y, Sun H, Peng W . 2D Transition Metal Dichalcogenides and Graphene-Based Ternary Composites for Photocatalytic Hydrogen Evolution and Pollutants Degradation. Nanomaterials (Basel). 2017; 7(3). PMC: 5388164. DOI: 10.3390/nano7030062. View

17.

Li H, Lu G, Yin Z, He Q, Li H, Zhang Q . Optical identification of single- and few-layer MoS₂ sheets. Small. 2012; 8(5):682-6. DOI: 10.1002/smll.201101958. View

18.

Cui Y, Xin R, Yu Z, Pan Y, Ong Z, Wei X . High-Performance Monolayer WS2 Field-Effect Transistors on High-κ Dielectrics. Adv Mater. 2015; 27(35):5230-4. DOI: 10.1002/adma.201502222. View

19.

Giubileo F, Di Bartolomeo A, Martucciello N, Romeo F, Iemmo L, Romano P . Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation. Nanomaterials (Basel). 2017; 6(11). PMC: 5245740. DOI: 10.3390/nano6110206. View

20.

Kim K, Zhao Y, Jang H, Lee S, Kim J, Kim K . Large-scale pattern growth of graphene films for stretchable transparent electrodes. Nature. 2009; 457(7230):706-10. DOI: 10.1038/nature07719. View