Selective Purcell Enhancement of Two Closely Linked Zero-phonon Transitions of a Silicon Carbide Color Center

Overview

Journal Proc Natl Acad Sci U S A

Specialty Science

Date 2017 Apr 5

PMID 28373543

Citations 11

Authors

David O Bracher

Xingyu Zhang

Evelyn L Hu

Affiliations

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Abstract

Point defects in silicon carbide are rapidly becoming a platform of great interest for single-photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCCs) can serve as an efficient light-matter interface both to augment the defect emission and to aid in studying the defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers. These cavities are used to achieve Purcell enhancement of two closely spaced defect zero-phonon lines (ZPL). Enhancements of >80-fold are measured using multiple techniques. Additionally, the nature of the cavity coupling to the different ZPLs is examined.

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