Wide Gamut White Light Emitting Diodes Using Quantum Dot-silicone Film Protected by an Atomic Layer Deposited TiO2 Barrier

Overview

Journal Chem Commun (Camb)

Publisher Royal Society of Chemistry

Specialty Chemistry

Date 2015 Aug 22

PMID 26295071

Citations 4

Authors

Guan-Hong Chen

Chang-Wei Yeh

Ming-Hua Yeh

Shih-Jung Ho

Hsueh-Shih Chen

Affiliations

Soon will be listed here.

Abstract

Wide gamut light emitting diodes using quantum dot-silicone film protected by atomic layer deposited TiO2 film were demonstrated. The core/shell QDs with multi-emission peaks were synthesised by a one-pot approach, in which the emission wavelength and colour composition were in situ adjusted during the synthetic process.

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