Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities

Overview

Journal Sci Rep

Specialty Science

Date 2015 Aug 12

PMID 26260674

Authors

Yen-Fu Lin

Chia-Hung Chang

Tsu-Chang Hung

Wen-Bin Jian

Kazuhito Tsukagoshi

Yue-Han Wu

Li Chang

Zhaoping Liu

Jiye Fang

Affiliations

Soon will be listed here.

Abstract

To fabricate reliable nanoelectronics, whether by top-down or bottom-up processes, it is necessary to study the electrical properties of nanocontacts. The effect of nanocontact disorder on device properties has been discussed but not quantitatively studied. Here, by carefully analyzing the temperature dependence of device electrical characteristics and by inspecting them with a microscope, we investigated the Schottky contact and Mott's variable-range-hopping resistances connected in parallel in the nanocontact. To interpret these parallel resistances, we proposed a model of Ti/TiOx in the interface between the metal electrodes and nanowires. The hopping resistance as well as the nanocontact disorder dominated the total device resistance for high-resistance devices, especially at low temperatures. Furthermore, we introduced nanocontact disorder to modulate the light and gas responsivities of the device; unexpectedly, it multiplied the sensitivities compared with the intrinsic sensitivity of the nanowires. Our results improve the collective understanding of electrical contacts to low-dimensional semiconductor devices and will aid performance optimization in future nanoelectronics.

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