Functional Ferroelectric Tunnel Junctions on Silicon

Overview

Journal Sci Rep

Specialty Science

Date 2015 Jul 29

PMID 26215429

Citations 6

Authors

Rui Guo

Zhe Wang

Shengwei Zeng

Kun Han

Lisen Huang

Darrell G Schlom

T Venkatesan

Ariando

Jingsheng Chen

Affiliations

Soon will be listed here.

Abstract

The quest for solid state non-volatility memory devices on silicon with high storage density, high speed, low power consumption has attracted intense research on new materials and novel device architectures. Although flash memory dominates in the non-volatile memory market currently, it has drawbacks, such as low operation speed, and limited cycle endurance, which prevents it from becoming the "universal memory". In this report, we demonstrate ferroelectric tunnel junctions (Pt/BaTiO3/La0.67Sr0.33MnO3) epitaxially grown on silicon substrates. X-ray diffraction spectra and high resolution transmission electron microscope images prove the high epitaxial quality of the single crystal perovskite films grown on silicon. Furthermore, the write speed, data retention and fatigue properties of the device compare favorably with flash memories. The results prove that the silicon-based ferroelectric tunnel junction is a very promising candidate for application in future non-volatile memories.

Citing Articles

Atomic-scale fatigue mechanism of ferroelectric tunnel junctions.

Yang Y, Wu M, Zheng X, Zheng C, Xu J, Xu Z Sci Adv. 2021; 7(48):eabh2716.

PMID: 34818041 PMC: 8612688. DOI: 10.1126/sciadv.abh2716.

Interface-engineered electron and hole tunneling.

Guo R, Tao L, Li M, Liu Z, Lin W, Zhou G Sci Adv. 2021; 7(13).

PMID: 33762343 PMC: 7990336. DOI: 10.1126/sciadv.abf1033.

Integration of c-axis oriented BiNdTiHfO/LaSrMnO ferromagnetic-ferroelectric composite film on Si substrate.

Duan Z, Cui Y, Zhao G, Li X, Peng B, Han C Sci Rep. 2017; 7(1):11341.

PMID: 28900251 PMC: 5595857. DOI: 10.1038/s41598-017-11931-5.

Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction.

Hou P, Wang J, Zhong X Sci Rep. 2017; 7(1):4525.

PMID: 28674444 PMC: 5495759. DOI: 10.1038/s41598-017-04825-z.

Monolithic integration of room-temperature multifunctional BaTiO3-CoFe2O4 epitaxial heterostructures on Si(001).

Scigaj M, Dix N, Gazquez J, Varela M, Fina I, Domingo N Sci Rep. 2016; 6:31870.

PMID: 27550543 PMC: 4994007. DOI: 10.1038/srep31870.

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