Xiao P, El Sachat A, Angel E, Ng R, Nikoulis G, Kioseoglou J
Sci Adv. 2024; 10(13):eadm8825.
PMID: 38552010
PMC: 10980264.
DOI: 10.1126/sciadv.adm8825.
Sleziona S, Pelella A, Faella E, Kharsah O, Skopinski L, Maas A
Nanoscale Adv. 2023; 5(24):6958-6966.
PMID: 38059017
PMC: 10696994.
DOI: 10.1039/d3na00543g.
Sovizi S, Angizi S, Alem S, Goodarzi R, Taji Boyuk M, Ghanbari H
Chem Rev. 2023; 123(24):13869-13951.
PMID: 38048483
PMC: 10756211.
DOI: 10.1021/acs.chemrev.3c00147.
Ramo L, Giordano M, Ferrando G, Canepa P, Telesio F, Repetto L
ACS Appl Nano Mater. 2023; 6(19):18623-18631.
PMID: 37854851
PMC: 10580238.
DOI: 10.1021/acsanm.3c04398.
Zhang H, Tu X, Wu Z, Guo J, Fei L, Liao X
iScience. 2023; 26(10):107895.
PMID: 37766970
PMC: 10520514.
DOI: 10.1016/j.isci.2023.107895.
Unravelling the Data Retention Mechanisms under Thermal Stress on 2D Memristors.
Aldana S, Zhang H
ACS Omega. 2023; 8(30):27543-27552.
PMID: 37546646
PMC: 10398860.
DOI: 10.1021/acsomega.3c03200.
Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications.
Giri A, Park G, Jeong U
Chem Rev. 2023; 123(7):3329-3442.
PMID: 36719999
PMC: 10103142.
DOI: 10.1021/acs.chemrev.2c00455.
Versatile Approach of Silicon Nanofabrication without Resists: Helium Ion-Bombardment Enhanced Etching.
Wen X, Zhang L, Tian F, Xu Y, Hu H
Nanomaterials (Basel). 2022; 12(19).
PMID: 36234396
PMC: 9565762.
DOI: 10.3390/nano12193269.
Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications.
Kirubasankar B, Won Y, Adofo L, Choi S, Kim S, Kim K
Chem Sci. 2022; 13(26):7707-7738.
PMID: 35865881
PMC: 9258346.
DOI: 10.1039/d2sc01398c.
Quantification of defects engineered in single layer MoS.
Aryeetey F, Ignatova T, Aravamudhan S
RSC Adv. 2022; 10(39):22996-23001.
PMID: 35520301
PMC: 9054692.
DOI: 10.1039/d0ra03372c.
Engineering Optically Active Defects in Hexagonal Boron Nitride Using Focused Ion Beam and Water.
Glushkov E, Macha M, Rath E, Navikas V, Ronceray N, Cheon C
ACS Nano. 2022; 16(3):3695-3703.
PMID: 35254820
PMC: 8945698.
DOI: 10.1021/acsnano.1c07086.
Hole doping effect of MoS via electron capture of He ion irradiation.
Han S, Yun W, Kim H, Kim Y, Kim D, Ahn C
Sci Rep. 2021; 11(1):23590.
PMID: 34880289
PMC: 8654839.
DOI: 10.1038/s41598-021-02932-6.
Covalent Patterning of 2D MoS.
Chen X, Kohring M, Assebban M, Tywoniuk B, Bartlam C, Moses Badlyan N
Chemistry. 2021; 27(52):13117-13122.
PMID: 34357651
PMC: 8518675.
DOI: 10.1002/chem.202102021.
A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope.
Allen F
Beilstein J Nanotechnol. 2021; 12:633-664.
PMID: 34285866
PMC: 8261528.
DOI: 10.3762/bjnano.12.52.
Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS field-effect transistors.
Jadwiszczak J, Maguire P, Cullen C, Duesberg G, Zhang H
Beilstein J Nanotechnol. 2020; 11:1329-1335.
PMID: 32953377
PMC: 7476591.
DOI: 10.3762/bjnano.11.117.
An atomic force microscope integrated with a helium ion microscope for correlative nanoscale characterization.
Andany S, Hlawacek G, Hummel S, Brillard C, Kangul M, Fantner G
Beilstein J Nanotechnol. 2020; 11:1272-1279.
PMID: 32953371
PMC: 7476598.
DOI: 10.3762/bjnano.11.111.
Metallic edge states in zig-zag vertically-oriented MoS nanowalls.
Tinoco M, Maduro L, Conesa-Boj S
Sci Rep. 2019; 9(1):15602.
PMID: 31666574
PMC: 6821918.
DOI: 10.1038/s41598-019-52119-3.
Site-selectively generated photon emitters in monolayer MoS via local helium ion irradiation.
Klein J, Lorke M, Florian M, Sigger F, Sigl L, Rey S
Nat Commun. 2019; 10(1):2755.
PMID: 31227692
PMC: 6588625.
DOI: 10.1038/s41467-019-10632-z.
Oxide-mediated recovery of field-effect mobility in plasma-treated MoS.
Jadwiszczak J, OCallaghan C, Zhou Y, Fox D, Weitz E, Keane D
Sci Adv. 2018; 4(3):eaao5031.
PMID: 29511736
PMC: 5837433.
DOI: 10.1126/sciadv.aao5031.
Chemical Changes in Layered Ferroelectric Semiconductors Induced by Helium Ion Beam.
Belianinov A, Burch M, Hysmith H, Ievlev A, Iberi V, Susner M
Sci Rep. 2017; 7(1):16619.
PMID: 29192283
PMC: 5709364.
DOI: 10.1038/s41598-017-16949-3.