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Field-effect Transistors Based on Amorphous Black Phosphorus Ultrathin Films by Pulsed Laser Deposition

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Journal Adv Mater
Date 2015 May 15
PMID 25973767
Citations 29
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Abstract

Amorphous black phosphorus (a-BP) ultrathin films are deposited by pulsed laser deposition. a-BP field-effect trans-istors, exhibiting high carrier mobility and moderate on/off current ratio, are demonstrated. Thickness dependence of the bandgap, mobility, and on/off ratio are observed. These results offer not only a new nanoscale member in the BP family, but also a new opportunity to develop nano-electronic devices.

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