Active Control of Magnetoresistance of Organic Spin Valves Using Ferroelectricity

Overview

Journal Nat Commun

Specialty Biology

Date 2014 Jul 11

PMID 25008155

Citations 4

Authors

Dali Sun

Mei Fang

Xiaoshan Xu

Lu Jiang

Hangwen Guo

Yanmei Wang

Wenting Yang

Lifeng Yin

Paul C Snijders

T Z Ward

Zheng Gai

X-G Zhang

Ho Nyung Lee

Jian Shen

Affiliations

Soon will be listed here.

Abstract

Organic spintronic devices have been appealing because of the long spin lifetime of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer: the magnetoresistance of the spin valve depends strongly on the history of the bias voltage, which is correlated with the polarization of the ferroelectric layer; the magnetoresistance even changes sign when the electric polarization of the ferroelectric layer is reversed. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves.

Citing Articles

Challenges and Prospects of Molecular Spintronics.

Gu X, Guo L, Qin Y, Yang T, Meng K, Hu S Precis Chem. 2024; 2(1):1-13.

PMID: 39474567 PMC: 11503717. DOI: 10.1021/prechem.3c00071.

Tuning the interfacial spin-orbit coupling with ferroelectricity.

Fang M, Wang Y, Wang H, Hou Y, Vetter E, Kou Y Nat Commun. 2020; 11(1):2627.

PMID: 32457302 PMC: 7250895. DOI: 10.1038/s41467-020-16401-7.

Achieving large and nonvolatile tunable magnetoresistance in organic spin valves using electronic phase separated manganites.

Yang W, Shi Q, Miao T, Li Q, Cai P, Liu H Nat Commun. 2019; 10(1):3877.

PMID: 31462635 PMC: 6713754. DOI: 10.1038/s41467-019-11827-0.

Inverse spin Hall effect from pulsed spin current in organic semiconductors with tunable spin-orbit coupling.

Sun D, van Schooten K, Kavand M, Malissa H, Zhang C, Groesbeck M Nat Mater. 2016; 15(8):863-9.

PMID: 27088233 DOI: 10.1038/nmat4618.

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