The Nanoscale Implications of a Molecular Gas Beam During Electron Beam Induced Deposition

The gas flux direction in focused electron beam induced processes can strongly destabilize the morphology on the nanometer scale. We demonstrate how pattern parameters such as position relative to the gas nozzle, axial rotation, scanning direction, and patterning sequence result in different growth modes for identical structures. This is mainly caused by nanoscale geometric shadowing, particularly when shadowing distances are comparable to surface diffusion lengths of (CH3)3-Pt-CpCH3 adsorbates. Furthermore, two different adsorbate replenishment mechanisms exist and are governed by either surface diffusion or directional gas flux adsorption. The experimental study is complemented by calculations and dynamic growth simulations which successfully emulate the observed morphology instabilities and support the proposed growth model.